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參數資料
| 型號： | 934056036215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大小： | 281K |
| 代理商： | 934056036215 |
BSH111
N-channel enhancement mode eld-effect transistor
Rev. 02 — 26 April 2002
Product data
M3D088
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS technology.
Product availability:
BSH111 in SOT23.
2.
Features
s TrenchMOS technology
s Very fast switching
s Low threshold voltage
s Subminiature surface mount package.
3.
Applications
s Battery management
s High speed switch
s Logic level translator.
4.
Pinning information
Table 1:
Pinning - SOT23, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT23
2
source (s)
3
drain (d)
MSB003
Top view
12
3
s
d
g
MBB076
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