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參數(shù)資料
| 型號： | 934056372115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMEIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 50K |
| 代理商： | 934056372115 |
2001 Oct 10
3
Philips Semiconductors
Product specication
ZenBlockTM; zener with
integrated blocking diode
BZD142W
ELECTRICAL CHARACTERISTICS ZENER/TVS
Tj =25 °C unless otherwise specied.
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.
2. Non-repetitive peak reverse current in accordance with
“IEC 60060-1, Section 8” (10/1000
s pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.4.
For more information please refer to the
“General Part of associated Handbook”.
TYPE
NUMBER
SUFFIX(1)
WORKING VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
VZ (V) at Itest
SZ (%/K) at Itest
Itest (mA)
V(CL)R
(V)
at IRSM
(A)(2)
IR (A)
at VR (V)
MIN.
NOM.
MAX.
MIN.
MAX.
68
61
68
75
0.07
0.12
10
106
0.94
5
56
100
90
100
110
0.07
0.12
5
139
0.72
5
82
160
149
160
171
0.07
0.12
5
224
0.45
5
130
180
162
180
198
0.07
0.12
5
250
0.40
5
150
200
180
200
220
0.07
0.12
5
277
0.36
5
160
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
700
V
IR
reverse current
VR = 600 V
5
A
VR = 600 V; Tj = 150 °C
100
A
Cd
diode capacitance
f = 1 MHz; VR =0V;
see Fig.3
15
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
30
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W
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