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參數資料
| 型號： | 934056373135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMEIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數： | 4/8頁 |
| 文件大小： | 50K |
| 代理商： | 934056373135 |
2001 Oct 10
4
Philips Semiconductors
Product specication
ZenBlockTM; zener with
integrated blocking diode
BZD142W
GRAPHICAL DATA
handbook, halfpage
0
3.0
2.0
1.0
0
40
200
T (
°C)
P
(W)
80
120
160
MBL106
Fig.2
Maximum total power dissipation as a
function of temperature.
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted (see Fig.4).
handbook, halfpage
102
10
1
MBL107
110
Cd
(pF)
VR (V)
102
103
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
MSB213
4.5
2.5
1.25
50
Fig.4 Printed-circuit board for surface mounting.
Dimensions in mm.
handbook, halfpage
MGD521
IRSM
(%)
100
90
50
10
t1
t2
t
Fig.5
Non-repetitive peak reverse current pulse
definition.
In accordance with
“IEC 60060-1, Section 8”.
t1 =10 s.
t2 = 1000 s.
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