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參數資料
| 型號： | 934056386118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 244K |
| 代理商： | 934056386118 |
Si9956DY
N-channel enhancement mode eld-effect transistor
Rev. 01 — 16 July 2001
Product data
c
M3D315
1.
Description
Dual N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
Si9956DY in SOT96-1 (SO8).
2.
Features
s Low on-state resistance
s Fast switching
s TrenchMOS technology.
3.
Applications
s DC to DC convertors
s DC motor control
s Lithium-ion battery applications
s Notebook PC
s Portable equipment applications.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT96-1, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
source 1 (s1)
SOT96-1 (SO8)
2
gate 1 (g1)
3
source 2 (s2)
4
gate 2 (g2)
5,6
drain 2 (d2)
7,8
drain 1 (d1)
12
34
5
6
7
8
pin 1 index
03ab52
g1
d1
s1
d2
g2
s2
03ab58
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