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參數(shù)資料
| 型號： | 934056470215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 95 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 50K |
| 代理商： | 934056470215 |
2001 Oct 12
3
Philips Semiconductors
Product specication
Low-voltage variable capacitance double diode
BB201
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
IR
reverse current
VR =15V
10
nA
VR = 15 V; Tj =85 °C
200
nA
rS
diode series resistance
f = 100 MHz; VR =3V
0.25
0.5
Cd
diode capacitance
VR = 1 V; f = 1 MHz
89
95
102
pF
VR = 3 V; f = 1 MHz
60
pF
VR = 7.5 V; f = 1 MHz
25.5
27.6
29.7
pF
VR = 8 V; f = 1 MHz
25.5
pF
capacitance ratio
f = 1 MHz
3.1
3.8
C
d1V
()
C
d 7.5V
()
--------------------
GRAPHICAL DATA
handbook, full pagewidth
0
140
100
120
20
40
60
80
MGU477
101
110
Cd
(pF)
VR (V)
102
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
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