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參數資料
| 型號： | 934056537115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | PLASTIC, SMD, UMT3, SC-70, CMPAK-3 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 53K |
| 代理商： | 934056537115 |
2001 Apr 17
3
Philips Semiconductors
Product specication
General purpose PIN diode
BAP50-05W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
IF =50mA
0.95
1.1
V
VR
reverse voltage
IR =10 A50
V
IR
reverse current
VR =50V
100
nA
Cd
diode capacitance
VR = 0; f = 1 MHz
0.45
pF
VR = 1 V; f = 1 MHz
0.35
0.6
pF
VR = 5 V; f = 1 MHz
0.3
0.5
pF
rD
diode forward resistance
IF = 0.5 mA; f = 100 MHz; note 1
25
40
IF = 1 mA; f = 100 MHz; note 1
14
25
IF = 10 mA; f = 100 MHz; note 1
35
|s
21|
2
isolation
VR = 0; f = 900 MHz
19
dB
VR = 0; f = 1800 MHz
15.7
dB
VR = 0; f = 2450 MHz
13.5
dB
|s
21|
2
insertion loss
IF = 0.5 mA; f = 900 MHz
1.84
dB
IF = 0.5 mA; f = 1800 MHz
1.90
dB
IF = 0.5 mA; f = 2450 MHz
1.92
dB
|s
21|
2
insertion loss
IF = 1 mA; f = 900 MHz
1.08
dB
IF = 1 mA; f = 1800 MHz
1.13
dB
IF = 1 mA; f = 2450 MHz
1.17
dB
|s21|2
insertion loss
IF = 10 mA; f = 900 MHz
0.26
dB
IF = 10 mA; f = 1800 MHz
0.30
dB
IF = 10 mA; f = 2450 MHz
0.36
dB
τ
L
charge carrier life time
when switched from IF =10mA to
IR = 6 mA; RL = 100 ;
measured at IR =3mA
1.05
s
LS
series inductance
IF = 100 mA; f = 100 MHz
1.6
nH
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
250
K/W
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