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參數資料
| 型號： | 934056546135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | 30 V, SILICON, PIN DIODE |
| 封裝： | PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 62K |
| 代理商： | 934056546135 |
2001 May 11
3
Philips Semiconductors
Product specication
Silicon PIN diode
BAP65-02
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 50 mA
0.9
1.1
V
IR
reverse leakage current
VR =20V
20
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
0.65
pF
VR = 1 V; f = 1 MHz
0.55
0.9
pF
VR = 3 V; f = 1 MHz
0.5
0.8
pF
VR = 20 V; f = 1 MHz
0.375
pF
rD
diode forward resistance
IF = 1 mA; f = 100 MHz
1
IF = 5 mA; f = 100 MHz; note 1
0.65
0.95
IF = 10 mA; f = 100 MHz; note 1
0.56
0.9
IF = 100 mA; f = 100 MHz
0.35
|s
21|
2
isolation
VR = 0; f = 900 MHz
10
dB
VR = 0; f = 1800 MHz
5.8
dB
VR = 0; f = 2450 MHz
4.4
dB
|s
21|
2
insertion loss
IF = 1 mA; f = 900 MHz
0.11
dB
IF = 1 mA; f = 1800 MHz
0.13
dB
IF = 1 mA; f = 2450 MHz
0.16
dB
|s
21|
2
insertion loss
IF = 5 mA; f = 900 MHz
0.08
dB
IF = 5 mA; f = 1800 MHz
0.11
dB
IF = 5 mA; f = 2450 MHz
0.13
dB
|s21|2
insertion loss
IF = 10 mA; f = 900 MHz
0.07
dB
IF = 10 mA; f = 1800 MHz
0.1
dB
IF = 10 mA; f = 2450 MHz
0.13
dB
|s21|2
insertion loss
IF = 100 mA; f = 900 MHz
0.07
dB
IF = 100 mA; f = 1800 MHz
0.1
dB
IF = 100 mA; f = 2450 MHz
0.128
dB
τL
charge carrier life time
when switched from IF =10mA to
IR = 6 mA; RL = 100 ;
measured at IR =3mA
0.17
s
LS
series inductance
IF = 100 mA; f = 100 MHz
0.6
nH
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
85
K/W
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