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參數(shù)資料
| 型號(hào)： | 934056549115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | 30 V, SILICON, PIN DIODE |
| 封裝： | PLASTIC, SMD, SC-70, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 62K |
| 代理商： | 934056549115 |
2001 May 07
3
Philips Semiconductors
Product specication
Silicon PIN diode
BAP65-05W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
IF = 50 mA
0.9
1.1
V
IR
reverse leakage current
VR =20V
20
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
0.7
pF
VR = 1 V; f = 1 MHz
0.575
0.9
pF
VR = 3 V; f = 1 MHz
0.525
0.8
pF
VR = 20 V; f = 1 MHz
0.425
pF
rD
diode forward resistance
IF = 1 mA; f = 100 MHz
1
IF = 5 mA; f = 100 MHz; note 1
0.65
0.95
IF = 10 mA; f = 100 MHz; note 1
0.56
0.9
IF = 100 mA; f = 100 MHz
0.35
|s
21|
2
isolation
VR = 0; f = 900 MHz
9.3
dB
VR = 0; f = 1800 MHz
5.3
dB
VR = 0; f = 2450 MHz
3.5
dB
|s
21|
2
insertion loss
IF = 1 mA; f = 900 MHz
0.11
dB
IF = 1 mA; f = 1800 MHz
0.17
dB
IF = 1 mA; f = 2450 MHz
0.24
dB
|s
21|
2
insertion loss
IF = 5 mA; f = 900 MHz
0.08
dB
IF = 5 mA; f = 1800 MHz
0.14
dB
IF = 5 mA; f = 2450 MHz
0.21
dB
|s
21|
2
insertion loss
IF = 10 mA; f = 900 MHz
0.08
dB
IF = 10 mA; f = 1800 MHz
0.14
dB
IF = 10 mA; f = 2450 MHz
0.21
dB
|s
21|
2
insertion loss
IF = 100 mA; f = 900 MHz
0.06
dB
IF = 100 mA; f = 1800 MHz
0.13
dB
IF = 100 mA; f = 2450 MHz
0.2
dB
τL
charge carrier life time
when switched from IF =10mA to
IR = 6 mA; RL = 100 ;
measured at IR =3mA
0.17
s
LS
series inductance
IF = 100 mA; f = 100 MHz
1.4
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
250
K/W
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