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參數資料
| 型號： | 934056599118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 934056599118 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PSMN057-200B
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Very low on-state resistance
V
DSS = 200 V
Fast switching
Low thermal resistance
I
D = 39 A
R
DS(ON) ≤ 57 m
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PSMN057-200B is supplied in the SOT404 (D
2PAK) surface mounted package.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
(no connection possible)
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb = 25 C
-
39
A
T
mb = 100 C
-
27.5
A
I
DM
Pulsed drain current
T
mb = 25 C
-
156
A
P
D
Total power dissipation
T
mb = 25 C
-
250
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
d
g
s
13
mb
2
December 2000
1
Rev 1.000
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