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參數資料
| 型號： | 934056623215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | 100 V, SILICON, PIN DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934056623215 |
2001 Apr 17
3
Philips Semiconductors
Product specication
Silicon PIN diode
BAP1321-04
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
IF = 50 mA
0.95
1.1
V
IR
reverse leakage current
VR =60V
100
nA
Cd
diode capacitance
VR = 0; f = 1 MHz
0.42
pF
VR = 1 V; f = 1 MHz
0.375
0.45
pF
VR = 20 V; f = 1 MHz
0.275
0.325
pF
rD
diode forward resistance
f = 100 MHz; note 1
IF = 0.5 mA
3.4
5.0
IF = 1 mA
2.4
3.6
IF = 10 mA
1.2
1.8
IF = 100 mA
0.85
1.3
|s
21|
2
isolation
VR = 0; f = 900 MHz
15.7
dB
VR = 0; f = 1800 MHz
10.5
dB
VR = 0; f = 2450 MHz
7.9
dB
|s
21|
2
insertion loss
IF = 0.5 mA; f = 900 MHz
0.27
dB
IF = 0.5 mA; f = 1800 MHz
0.35
dB
IF = 0.5 mA; f = 2450 MHz
0.43
dB
|s
21|
2
insertion loss
IF = 1 mA; f = 900 MHz
0.21
dB
IF = 1 mA; f = 1800 MHz
0.29
dB
IF = 1 mA; f = 2450 MHz
0.37
dB
|s
21|
2
insertion loss
IF = 10 mA; f = 900 MHz
0.14
dB
IF = 10 mA; f = 1800 MHz
0.21
dB
IF = 10 mA; f = 2450 MHz
0.29
dB
|s
21|
2
insertion loss
IF = 100 mA; f = 900 MHz
0.10
dB
IF = 100 mA; f = 1800 MHz
0.18
dB
IF = 100 mA; f = 2450 MHz
0.26
dB
τL
charge carrier life time
when switched from IF = 10 mA to IR = 6 mA;
RL = 100 ; measured at IR =3mA
0.5
s
LS
series inductance
IF = 100 mA; f = 100 MHz
1.4
nH
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
220
K/W
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