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參數資料
| 型號： | 934056634315 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | 30 V, SILICON, PIN DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, 2 PIN |
| 文件頁數： | 3/7頁 |
| 文件大小： | 75K |
| 代理商： | 934056634315 |
2001 Nov 01
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP65-01
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF =50mA
0.9
1.1
V
IR
reverse leakage current
VR =20V
20
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
0.61
pF
VR = 1 V; f = 1 MHz
0.48
0.9
pF
VR = 3 V; f = 1 MHz
0.43
0.8
pF
VR = 20 V; f = 1 MHz
0.375
pF
rD
diode forward resistance
IF = 1 mA; f = 100 MHz
1.0
IF = 5 mA; f = 100 MHz; note 1
0.6
0.95
IF = 10 mA; f = 100 MHz; note 1
0.5
0.9
IF = 100 mA; f = 100 MHz
0.3
|s
21|
2
isolation
VR = 0; f = 900 MHz
9.4
dB
VR = 0; f = 1800 MHz
5.5
dB
VR = 0; f = 2450 MHz
4.1
dB
|s
21|
2
insertion loss
IF = 1 mA; f = 900 MHz
0.10
dB
IF = 1 mA; f = 1800 MHz
0.12
dB
IF = 1 mA; f = 2450 MHz
0.15
dB
|s
21|
2
insertion loss
IF = 5 mA; f = 900 MHz
0.08
dB
IF = 5 mA; f = 1800 MHz
0.10
dB
IF = 5 mA; f = 2450 MHz
0.12
dB
|s
21|
2
insertion loss
IF =10mA; f=900MHz
0.06
dB
IF = 10 mA; f = 1800 MHz
0.09
dB
IF = 10 mA; f = 2450 MHz
0.11
dB
|s
21|
2
insertion loss
IF = 100 mA; f = 900 MHz
0.05
dB
IF = 100 mA; f = 1800 MHz
0.08
dB
IF = 100 mA; f = 2450 MHz
0.10
dB
τ
L
charge carrier life time
when switched from IF =10 mA to
IR =6 mA; RL = 100 ;
measured at IR =3mA
0.17
s
LS
series inductance
IF = 100 mA; f = 100 MHz
0.6
nH
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
190
K/W
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