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參數資料
| 型號： | 934056650183 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.05 A, 2000 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 55K |
| 代理商： | 934056650183 |
2002 Jan 24
2
Philips Semiconductors
Product specication
High-voltage car ignition diode
BYX132GPS
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability.
APPLICATIONS
Car ignition systems
Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD118A is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
handbook, halfpage
ka
MAM402
Fig.1 Simplified outline (SOD118A) and symbol.
Cathode indicated by a red band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
2kV
VRWM
crest working reverse voltage
2kV
IF(AV)
average forward current
50
mA
IFRM
repetitive peak forward current
1A
IRSM
non-repetitive peak reverse current
t = 100
s triangular pulse;
Tj max prior to surge
50
mA
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
continuous
175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
2.5
3.5
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 100 A
2.6
3.7
kV
IR
reverse current
VR =VRWMmax; Tj = 165 °C
30
A
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
Tamb =Tleads; lead length = 10 mm; in oil
100
K/W
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