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參數資料
| 型號： | 934056688116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 934056688116 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 (TO92) envelope intended
for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
700
V
CBO
Collector-Base voltage (open emitter)
-
700
V
CEO
Collector-emitter voltage (open base)
-
350
V
I
C
Collector current (DC)
-
1.0
A
I
CM
Collector current peak value
-
2.0
A
P
tot
Total power dissipation
T
lead ≤ 25 C
-
2.0
W
V
CEsat
Collector-emitter saturation voltage
I
C = 1.0 A;IB = 0.2 A
0.27
1.0
V
h
FE
I
C = 1.0 A; VCE = 5 V
12
19
t
fi
Fall time (Inductive)
I
C = 1.0 A; IB1= 0.2 A
56
76
ns
PINNING - SOT54 (TO92)
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE = 0 V
-
700
V
CEO
Collector to emitter voltage (open base)
-
350
V
CBO
Collector to base voltage (open emitter)
-
700
V
I
C
Collector current (DC)
-
1.0
A
I
CM
Collector current peak value
-
2.0
A
I
B
Base current (DC)
-
0.5
A
I
BM
Base current peak value
-
1.0
A
P
tot
Total power dissipation
T
mb ≤ 25 C
-
2.0
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-lead
Thermal resistance junction to lead
-
60
K/W
R
th j-a
Thermal resistance junction to ambient
pcb mounted; lead
150
-
K/W
length = 4 mm
b
c
e
32 1
May 2001
1
Rev 1.000
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