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參數資料
| 型號： | 934056750118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 245K |
| 代理商： | 934056750118 |
Si4800
N-channel enhancement mode eld-effect transistor
Rev. 01 — 13 July 2001
Product data
c
M3D315
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
Si4800 in SOT96-1 (SO8).
2.
Features
s Low on-state resistance
s Fast switching
s TrenchMOS technology.
3.
Applications
s DC to DC convertors
s DC motor control
s Lithium-ion battery applications
s Notebook PC
s Portable equipment applications.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT96-1, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1,2,3
source (s)
SOT96-1 (SO8)
4
gate (g)
5,6,7,8
drain (d)
4
5
1
8
Top view
MBK187
s
d
g
MBB076
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