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參數資料
| 型號： | 934056819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 266K |
| 代理商： | 934056819118 |
IRFR220
N-channel enhancement mode eld effect transistor
Rev. 01 — 14 August 2001
Product data
M3D300
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
IRFR220 in SOT428 (D-PAK).
2.
Features
s Fast switching
s Low on-state resistance
s Surface mount package.
3.
Applications
s Switched mode power supplies
s DC to DC converters.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT428 package.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pinning - SOT428 (D-PAK), simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT428 (D-PAK)
2
drain (d)
3
source (s)
mb
mounting base;
connected to drain (d)
MBK091
Top view
13
mb
2
s
d
g
MBB076
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