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參數(shù)資料
| 型號(hào)： | 934056878115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMEIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 50K |
| 代理商： | 934056878115 |
2001 Oct 10
2
Philips Semiconductors
Product specication
ZenBlockTM; zener with
integrated blocking diode
BZD142W
FEATURES
Zener and 600 V/100 ns blocking function in one
package(1)
Protects MOSFETS or power IC controllers such as
TINYSwitch
(2), TOPSwitch(2) and STARplug(3)
Glass passivated
Excellent clamping capability and stability
Supplied in 8 mm embossed tape.
DESCRIPTION
Cavity free cylindrical glass package through Implotec
(4)
technology. This package is hermetically sealed and
fatigue free as coefficients of expansion of all used parts
are matched.
(1) Types BZD142W-68,-100 and -160 have a 600 V blocking
diode with a minimum trr of 1000 ns.
(2) TINYSwitch and TOPSwitch are trademarks of Power
Integrations.
(3) STARplug is a trademark of Koninklijke Philips Electronics
N.V.
(4) Implotec is a trademark of Koninklijke Philips Electronics N.V.
handbook, halfpage
MAM433
Fig.1 Simplified outline (SOD87).
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
Limiting values zener
Ptot
total power dissipation
Ttp = 105 °C; see Fig.2
1.5
W
PRSM
non-repetitive peak reverse power
dissipation
10/1000
s exponential pulse;
Tj =25 °C prior to surge; see Fig.5
100
W
Limiting values blocking diode
VR
continuous reverse voltage
600
V
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
7.5
mJ
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