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參數資料
| 型號： | 934056920135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變容二極管 |
| 英文描述： | 30.85 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, SC-79, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 51K |
| 代理商： | 934056920135 |
2002 Feb 18
2
Philips Semiconductors
Product specication
Low-voltage variable capacitance diode
BB202
FEATURES
Very steep C/V curve
C0.2: 30.5 pF; C2.3: 9.5 pF
C0.2 to C2.3 ratio: min. 2.5
Very low series resistance
Ultra small SMD plastic package.
APPLICATIONS
Electronic tuning in FM radio
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB202 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD523 ultra
small SMD plastic package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BB202
L2
PIN
DESCRIPTION
1
cathode
2
anode
handbook, 2 columns
12
MBK441
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
6V
IF
continuous forward current
10
mA
Tstg
storage temperature
55
+85
°C
Tj
operating junction temperature
55
+85
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IR
reverse current
VR = 6 V; see Fig.3
10
nA
VR =6V; Tj =85 °C; see
Fig 3
100
nA
rs
diode series resistance
f = 100 MHz; C = 30 pF
0.35
0.6
Cd
diode capacitance
VR = 0.2; f = 1 MHz;
see Fig.2 and Fig.4
28.2
33.5
pF
VR = 2.3; f = 1 MHz;
see Fig.2 and Fig.4
7.2
11.2
pF
capacitance ratio
f = 1 MHz
2.5
C
d 0.2V
()
C
d 2.3V
()
--------------------
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