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參數資料
| 型號： | 934056951118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 9 A, 500 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 42K |
| 代理商： | 934056951118 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV29B-500
ultrafast
ELECTRICAL CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150C
-
0.90
1.03
V
I
F = 8 A
-
1.05
1.25
V
I
F = 20 A
-
1.20
1.40
V
I
R
Reverse current
V
R = VRRM
-
2.0
50
A
V
R = VRRM; Tj = 100 C
-
0.1
0.35
mA
Q
s
Reverse recovery charge
I
F = 2 A to VR ≥ 30 V;
-
40
60
nC
dI
F/dt = 20 A/s
t
rr
Reverse recovery time
I
F = 1 A to VR ≥ 30 V;
-
50
60
ns
dI
F/dt = 100 A/s
I
rrm
Peak reverse recovery current
I
F = 10 A to VR ≥ 30 V;
-
4.0
5.5
A
dI
F/dt = 50 A/s; Tj = 100C
V
fr
Forward recovery voltage
I
F = 10 A; dIF/dt = 10 A/s
-
2.5
-
V
Fig.1. Definition of t
rr, Qs and Irrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F = f(IF(AV));
square wave where I
F(AV) =IF(RMS) x √D.
Fig.4. Maximum forward dissipation P
F = f(IF(AV));
sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
5
10
15
0
5
10
15
0.5
0.2
0.1
BYV29
IF(AV) / A
PF / W
D = 1.0
Rs = 0.0190 Ohms
Vo = 0.8900 V
D =
tp
T
t
I
Tmb(max) / C
150
137.5
125
112.5
time
V F
V
fr
V F
I
F
024
6
8
10
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYV29
Rs = 0.019 Ohms
Vo = 0.89V
IF(AV) / A
PF / W
Tmb(max) / C
150
145
140
135
130
125
120
September 2001
2
Rev 1.000
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