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參數資料
| 型號： | 934056981127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220, 5 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 376K |
| 代理商： | 934056981127 |
BUK91/9907-55ATE
TrenchPLUS logic level FET
Rev. 01 — 7 February 2002
Product data
1.
Description
N-channel enhancement mode eld-effect power transistor in a plastic package using
TrenchMOS technology, featuring very low on state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9107-55ATE in SOT426 (D2-PAK)
BUK9907-55ATE in SOT263B.
2.
Features
s Typical on-state resistance 5.8 m
s Q101 compliant
s ESD protection
s Monolithically integrated temperature sensor for overload protection.
3.
Applications
s Automotive and power switching:
x 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS))
x Protected drive for lamps.
4.
Pinning information
Table 1:
Pinning - SOT426 and SOT263B simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT426 (D2-PAK)
SOT263B
2
anode (a)
3
drain (d)
4
cathode (k)
5
source (s)
mb
mounting base;
connected to drain (d)
Front view
MBK127
12
4
35
mb
15
mb
MBL263
MBL317
d
s
g
a
k
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