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參數資料
| 型號： | 935196640112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PLL合成/DDS/VCOs |
| 英文描述： | PLL FREQUENCY SYNTHESIZER, 1300 MHz, PDIP18 |
| 封裝： | 0.300 INCH, PLASTIC, SOT-102, DIP-18 |
| 文件頁數： | 21/21頁 |
| 文件大小： | 214K |
| 代理商： | 935196640112 |
October 1992
9
Philips Semiconductors
Product specication
1.3 GHz Bidirectional I2C-bus controlled synthesizer
TSA5511
Table 3
ADC levels
Table 4
Address selection
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 134); all pin numbers refer to DIL18 version
THERMAL RESISTANCE
VOLTAGE APPLIED ON THE PORT P6
A2
A1
A0
0.6 VCC to 13.5 V
1
0
0.45 VCC to 0.6 VCC
011
0.3 VCC to 0.45 VCC
010
0.15 VCC to 0.3 VCC
001
0 to 0.15 VCC
000
MA1
MA0
VOLTAGE APPLIED ON PORT P3
0
0 to 0.1 VCC
0
1
always valid
1
0
0.4 to 0.6 VCC
1
0.9 VCC to 13.5 V
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC
supply voltage
0.3
6
V
V1
charge-pump output voltage
0.3
VCC
V
V2
crystal (Q1) input voltage
0.3
VCC
V
V4
serial data input/output voltage
0.3
6
V
V5
serial clock input voltage
0.3
6
V
V6-13
P7 to P0 input/output voltage
0.3
+16
V
V15
prescaler input voltage
0.3
VCC
V
V18
drive output voltage
0.3
VCC
V
I6-9
P7 to P4 output current (open collector)
115
mA
I4
SDA output current (open collector)
15
mA
Tstg
IC storage temperature range
40
+150
°C
Tj
maximum junction temperature
150
°C
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-a
from junction to ambient in free air
DIL18
80 K/W
SO16
110 K/W
SO20
80 K/W
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