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參數資料
| 型號： | 935258520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 55 W, 2 CHANNEL, AUDIO AMPLIFIER, PZIP13 |
| 封裝： | POWER, PLASTIC, SOT-141-6, DIL-BENT-SIL, 13 PIN |
| 文件頁數： | 17/18頁 |
| 文件大小： | 141K |
| 代理商： | 935258520112 |
1996 Jan 08
8
Philips Semiconductors
Product specication
2
× 40 W/2 stereo BTL car radio
power amplier with diagnostic facility
TDA8560Q
AC CHARACTERISTICS
VP = 14.4 V; RL =2 ; f = 1 kHz; Tamb =25 °C; measured in Fig.6; unless otherwise specied.
Notes
1. Dynamic distortion detector active.
2. Frequency response externally fixed.
3. Vripple =Vripple(max) = 2 V (p-p); Rs =0 .
4. B = 20 Hz to 20 kHz; Rs =0 .
5. B = 20 Hz to 20 kHz; Rs =10k.
6. B = 20 Hz to 20 kHz; independent of Rs.
7. Po = 25 W; Rs =10k.
8. Vi =Vi(max) = 1 V (RMS).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Po
output power
THD = 0.5%
25
30
W
THD = 10%
33
40
W
THD = 30%
45
55
W
Po
output power
VP = 13.2 V
THD = 0.5%
25
W
THD = 10%
35
W
THD
total harmonic distortion
Po =1W
0.1
%
V12 ≤ 0.6 V; note 1
10
%
B
power bandwidth
THD = 0.5%;
Po = 1dB
with respect to 25 W
20 to 20000
Hz
flr
low frequency roll-off
at
1 dB; note 2
25
Hz
fhr
high frequency roll-off
at
1dB
20
kHz
Gv
closed loop voltage gain
39
40
41
dB
SVRR
supply voltage ripple rejection
on
note 3
40
dB
mute
note 3
50
dB
standby
note 3
80
dB
Zi
input impedance
25
30
38
k
Vno
noise output voltage
on
note 4
200
250
V
on
note 5
250
V
mute
note 6
135
V
αcs
channel separation
note 7
45
dB
Gv
channel unbalance
1dB
Vo
output voltage in mute
note 8
5mV
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