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參數資料
| 型號： | 935269174115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 |
| 封裝： | 1.50 MM, PLASTIC, SOT-23, SOT-25, SO-5 |
| 文件頁數： | 7/12頁 |
| 文件大?。?/td> | 122K |
| 代理商： | 935269174115 |
Philips Semiconductors
Product data
SA56614-XX
CMOS system reset
2002 Sep 13
4
DC ELECTRICAL CHARACTERISTICS
Characteristics measured with Tamb = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TEST
CIRCUIT
MIN.
TYP.
MAX.
UNIT
VS
Reset detection threshold
VS – 2%
VS
VS + 2%
V
VS
Hysteresis
VDD = 0 V → VS + 1.0 V → 0 V
1
VS × 0.03 VS × 0.05 VS × 0.08
V
VS/T
Threshold voltage temperature
coefficient
–40
°C ≤ Tamb ≤ +85 °C
1
Fig. 16
–
±0.01
–
%/
°C
ICC
Supply current
VDD = VS + 1.0 V
–
0.25
1.0
A
IOH
IDS leakage current when OFF
VDD = VDS = 10 V
3
Fig. 18
–
0.1
A
INDS1
N-channel IDS output sink current 1
VDD = 1.2 V; VDS = 0.5 V
–0.23
0.50
–
mA
INDS2
N-channel IDS output sink current 2
(for VS > 2.6 V)
VDS = 0.5 V; VDD = 2.4 V
2
Fig. 17
–1.6
–3.7
–
mA
INDS3
N-channel IDS output sink current 3
(for VS > 3.9 V)
VDS = 0.5 V; VDD = 3.6 V
Fig. 17
–3.2
–7.00
–
mA
IPDS1
P-channel IDS output source current 1
(for VS < 4.0 V)
VDS = 0.5 V; VDD = 4.8 V
0.36
0.62
–
mA
IPDS2
P-channel IDS output source current 2
(for 4.0 V < VS < 5.7 V)
VDS = 0.5 V; VDD = 6.0 V
3
Fig. 18
0.46
0.75
–
mA
IPDS3
P-channel IDS output source current 3
(for VS ≥ 5.7 V)
VDS = 0.5 V; VDD = 8.4 V
0.59
0.96
–
mA
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