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參數資料
| 型號： | 93LC46-I/SL |
| 元件分類： | PROM |
| 英文描述： | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO14 |
| 封裝： | 0.150 INCH, PLASTIC, SOIC-14 |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 127K |
| 代理商： | 93LC46-I/SL |
93LC46/56/66
DS11168I-page 2
1995 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Maximum Ratings*
Vcc ........................................................................ 7.0V
All inputs and outputs w.r.t. VSS .... -0.6V to Vcc +1.0V
Storage temperature ...........................-65C to +150C
Ambient temp. with power applied ......-65C to +125C
Soldering temperature of leads (10 seconds) ...+300C
ESD protection on all pins..................................... 4 kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specication is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:
PIN FUNCTION TABLE
Name
Function
CS
Chip Select
CLK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
VSS
Ground
ORG
Memory Conguration
NU
Not Utilized
NC
No Connect
VCC
Power Supply
TABLE 1-2:
DC AND AC ELECTRICAL CHARACTERISTICS
Commercial Vcc = +2.0V to +6.0V
(C): Tamb = 0C to +70C
Industrial
Vcc = +2.5V to +6.0V
(I): Tamb = -40C to +85C
Parameter
Symbol
Min.
Max.
Units
Conditions
High level input voltage
VIH1
2.0
Vcc +1
V
VCC
≥ 2.7V
VIH2
0.7 Vcc
Vcc +1
V
VCC < 2.7V
Low level input voltage
VIL1
-0.3
0.8
V
VCC
≥ 2.7V
VIL2
-0.3
0.2 Vcc
V
VCC < 2.7V
Low level output voltage
VOL1
—
0.4
V
IOL = 2.1 mA; Vcc = 4.5V
VOL2
—
0.2
V
IOL =100
A; Vcc = Vcc Min.
High level output voltage
VOH1
2.4
—
V
IOH = -400
A; Vcc = 4.5V
VOH2
Vcc-0.2
—
V
IOH = -100
A; Vcc = Vcc Min.
Input leakage current
ILI
-10
10
AVIN = 0.1V to Vcc
Output leakage current
ILO
-10
10
AVOUT = 0.1V to Vcc
Pin capacitance
(all inputs/outputs)
CIN, COUT
—
7
pF
VIN/VOUT = 0 V (Note 1 & 3)
Tamb = +25C, FCLK = 1 MHz
Operating current
ICC write
—
3
mA
FCLK = 2 MHz; Vcc = 6.0V (Note 3)
ICC read
—
1
500
mA
A
FCLK = 2 MHz; Vcc = 6.0V
FCLK = 1 MHz; Vcc = 3.0V
Standby current
ICCS
—
100
30
A
CLK = CS = 0V; Vcc = 6.0V
CLK = CS = 0V; Vcc = 3.0V
Clock frequency
FCLK
—2
1
MHz
Vcc
≥ 4.5V
Vcc < 4.5V
Clock high time
TCKH
250
—
ns
Clock low time
TCKL
250
—
ns
Chip select setup time
TCSS
50
—
ns
Relative to CLK
Chip select hold time
TCSH
0
—
ns
Relative to CLK
Chip select low time
TCSL
250
—
ns
Data input setup time
TDIS
100
—
ns
Relative to CLK
Data input hold time
TDIH
100
—
ns
Relative to CLK
Data output delay time
TPD
—
400
ns
CL = 100 pF
Data output disable time
TCZ
—
100
ns
CL = 100 pF (Note 3)
Status valid time
TSV
—
500
ns
CL = 100 pF
Program cycle time
TWC
—
10
ms
ERASE/WRITE mode (Note 2)
TEC
—
15
ms
ERAL mode
TWL
—
30
ms
WRAL mode
Note 1:
This parameter is tested at Tamb = 25C and FCLK = 1 MHz.
Note 2:
Typical program cycle time is 4 ms per word.
Note 3:
This parameter is periodically sampled and not 100% tested.
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