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參數(shù)資料
| 型號(hào)： | 9639 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道150伏- 0.045歐姆- 5A條的SO - 8低柵極電荷STripFET⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 114K |
| 代理商： | 9639 |
1/6
TARGET DATA
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STS5N150
N-CHANNEL 150V - 0.045
- 5A SO-8
LOW GATE CHARGE STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.045
I
EXTREMELY HIGH dv/dt CAPABILITY
I
EXTREMELY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
Ordering Information
SALES TYPE
STS5N150
TYPE
V
DSS
R
DS(on)
I
D
STS5N150
150 V
<0.06
5 A
MARKING
S5N150
PACKAGE
SO-8
PACKAGING
TAPE & REEL
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
Parameter
Value
150
150
± 20
5
3
20
2.5
Unit
V
V
V
A
A
A
W
-55 to 150
°C
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