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參數資料
型號: 9OSC0313
元件分類: Voltage controlled oscillator
英文描述: VCO, 6000 MHz - 12000 MHz
文件頁數: 1/16頁
文件大小: 1710K
代理商: 9OSC0313
Pre-production
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 05-May-05
Units
GHz
dBm
dBc/Hz
dBc
VDC
mA
Min.
6.0
-
-3.5
-
Typ.
-
+6.0
+3.0
+1.0
-
TBD
+3.0
-3.0
-1.45
-2.5
-5.0
-6.0
250
200
Max.
12.0
1.0
-
-1.5
-
6.0-12.0 GHz GaAs MMIC
Voltage Controlled Feedback Oscillator
Page 1 of 16
Features
Ultra-Wide Frequency Range
Up to 1 GHz Tuning Bandwidth
Divide-By-Four Frequency Divider Output
12.0-24.0 GHz Doubler Output
+6.0 dBm Fundamental Output Power
100% On-Wafer, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Parameter
Supply Voltage (Vpsh)
Supply Voltage (Vbb)
Supply Voltage (Vee)
Supply Current (Iee_buff,_div,_dbl)
Supply Current (Icc_vmod1,_vmod2)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
-6.0 VDC
-7.0 VDC
300 mA
250 mA
-65 to +165 OC
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Mimix Broadband
s 6.0-12.0 GHz GaAs HBT wide tuning feedback VCO
MMIC is designed to operate up to 16 Hz tuning bandwidth using an
off-chip filter to provide the necessary oscillation conditions. The
oscillator consists of a linear Lange coupled phase-shifter, a Lange
coupled quadrature generator, a differential amplifier, a four-quandrant
I/Q modulator and an output buffer differential amplifier. The device
also contains a divide-by-four frequency divider for phase-locking, a
frequency doubler for 12.0-24.0 GHz output and two additional buffer
amplifiers at both the oscillation and doubled frequencies. This MMIC
uses Mimix Broadband
s 2
m GaAs HBT device model technology, and
is based upon electron beam lithography to ensure high repeatability
and uniformity. The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Frequency Range (f )
Tuning Bandwidth
Fundamental Output Power (Pout)
Doubler Output Power (Pdbl)
Divider Output Power (Pdiv)
SSB Phase Noise @ 100 KHz Offset (See Typical Application)
Harmonics/Subharmonics
Fine Phase Shifter Bias Voltage (Vpsh)
Modulator Base Bias Voltage (Vbb_Vmod)
Divider Base Bias Voltage (Vbb_div)
I/Q Bias Voltage (Vi1,2/Vq1,2)
Buffer, Divider, Doubler Emitter Bias Voltage (Vee_buff,_div,_dbl)
Modulator Emitter Vias Voltage (Vee_vmod1,_vmod2)
Supply Current (Iee_buff,_div,_dbl)
Supply Current (Iee_vmod1,vmod2)
9OSC0313
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