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參數資料
| 型號： | A1013 |
| 廠商： | BCD SEMICONDUCTOR MANUFACTURING LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE-2 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 177K |
| 代理商： | A1013 |
May. 2004
Version :0.0
Page 1 of 1
A1013 Silicon PNP Epitaxial Transistor
Description :The A1013 is designed for color TV class B sound output applications
Features: ●High voltage: VCEO=160V
●Complementary to C2383
Chip Appearance
Chip Size
1100um×1100um
Chip Thickness
210±20um
Base
240um×240um
Bonding Pad Size
Emitter 330um×260um
Front Metal
Al
Backside Metal
Au
Scribe line width
60um
Wafer Size
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Min
Max
Unit
Collector Cutoff Current
ICBO
VCB=-150V, IE=0
-1.0
uA
Emitter Cutoff Current
IEBO
VEB=-6V, IC=0
-1.0
uA
Collector-Base Breakdown Voltage
BVCBO
IC=-0.1mA
-160
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-10mA
-160
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-0.1mA
-6.0
V
DC Current Gain
hFE
VCE=-5V, IC=-200mA
60
320
Collector Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
-1.5
V
A1013
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