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參數資料
型號: A150N50X4B
廠商: ANAREN INC
元件分類: 終端器
英文描述: 0 MHz - 2700 MHz 50 ohm RF/MICROWAVE TERMINATION
封裝: ROHS COMPLIANT, CERAMIC PACKAGE-1
文件頁數: 1/2頁
文件大小: 159K
代理商: A150N50X4B
Available on Tape
and Reel For Pick and
Place Manufacturing.
USA/Canada:
Toll Free:
Europe
:
(315) 432-8909
(800) 544-2414
+44 2392-232392
Model A150N50X4B
Features:
RoHS Compliant
150 Watts
DC - 2.7 GHz
AlN Ceramic
Non-Nichrome Resistive
Element
Low VSWR
100% Tested
Chip Termination
150 Watts, 50
Ω
Description
The A150N50X4B is high performance Aluminum Nitride (AlN) chip
termination intended as a cost competitive alternative to Beryllium Oxide
(BeO). The termination is well suited to all cellular frequency bands such
as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling
makes the part ideal for terminating circulators, and for use in power
combiners. The termination is also RoHS compliant!
General Specifications
Resistive Element
Thick film
Substrate
AlN Ceramic
Terminal Finish
Matte Tin over Nickel Barrier
Operating Temperature
-55 to +200
°C (see de rating chart)
Tolerance is
±0.010”, unless otherwise specified. Designed to meet or exceed
applicable portions of MIL-E-5400. All dimensions in inches.
Electrical Specifications
Resistance Value:
50 Ohms,
± 2%
Power:
150 Watts
Frequency Range:
DC – 2.7 GHz
Return Loss
>26dB to 2.0 GHz
>20dB to 2.7 GHz
Specification based on unit properly installed using suggested mounting instructions
and a 50 ohm nominal impedance. Specifications subject to change.
Outline Drawing
UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES
1 of 2
相關PDF資料
PDF描述
A150N50X4E 0 MHz - 2700 MHz 50 ohm RF/MICROWAVE TERMINATION
A17 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
A18-1 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
A19-1 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
A19-1 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
相關代理商/技術參數
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