欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): A20M18LVR
元件分類: JFETs
英文描述: 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 155K
代理商: A20M18LVR
DYNAMIC CHARACTERISTICS
APT20M18B2VR_LVR
050-5910
Rev
A
5-2004
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.20
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -49A)
Reverse Recovery Time (I
S = -49A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -49A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
100
400
1.3
360
6.7
5
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 150V
I
D = 100A @ 25°C
V
GS = 15V
V
DD = 150V
I
D = 100A @ 25°C
R
G = 0.6
MIN
TYP
MAX
9880
2320
700
330
55
145
18
27
55
6
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 600H, RG = 25, Peak IL = 100A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S -ID100A
di/dt ≤ 200A/s V
R ≤200V
T
J ≤ 150°C
6 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料
PDF描述
APT20M18B2VR 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M18B2VR 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
A5T3638A 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
A5T3638 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
AF70N03D 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A20MB 制造商:Farnell / Pro-Power 功能描述:ADAPTOR FEMALE 20MM 制造商:pro-power 功能描述:ADAPTOR, FEMALE, 20MM
A-20MHZ-20-3RD 制造商:Raltron Electronics Corporation 功能描述:
A20MIC 3M269XA DISC 12" 功能描述:LAPPING FILM ALUM OXIDE 269XA RoHS:是 類別:工具 >> 光纖和配件 系列:Trizact™, 269XA MSDS 材料安全數(shù)據(jù)表:8234 MSDS 標(biāo)準(zhǔn)包裝:10 系列:*
A20MIC 3M269XA DISC 8" 功能描述:LAPPING FILM ALUM OXIDE 269XA RoHS:是 類別:工具 >> 光纖和配件 系列:Trizact™, 269XA MSDS 材料安全數(shù)據(jù)表:8234 MSDS 標(biāo)準(zhǔn)包裝:10 系列:*
A20N100J1ETA52F 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:RoHS Compliant Axial Multilayer Ceramic Capacitor
主站蜘蛛池模板: 寻乌县| 成武县| 布尔津县| 宜君县| 福建省| 平潭县| 平顺县| 左权县| 新乐市| 新野县| 无棣县| 阳高县| 城口县| 黔西| 临泉县| 阿拉善右旗| 阿瓦提县| 乌拉特前旗| 库车县| 宣化县| 开化县| 封丘县| 广元市| 龙门县| 白山市| 盐城市| 余江县| 高安市| 尚志市| 九台市| 兴隆县| 天全县| 九寨沟县| 渑池县| 绥棱县| 石阡县| 锡林郭勒盟| 丹东市| 济宁市| 临夏市| 涪陵区|