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參數資料
| 型號： | A32 |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | TO-8, 4 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 365K |
| 代理商： | A32 |
Cascadable Amplifier
100 to 2000 MHz
A32/ SMA32
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V4
1
Electrical Specifications: Z0 = 50
, VCC = +15 VDC
Parameter
Units
Typical
Guaranteed
25C
0 to 50C
-54 to +85C*
Frequency
MHz
10-2000
Small Signal Gain (min)
dB
10.0
9.0
8.5
Gain Flatness (max)
dB
±3.0
±0.7
±1.0
Reverse Isolation
dB
20
Noise Figure (max)
dB
3.5
4.0
4.5
Power Output
@ 1 dB comp. (min)
dBm
21.0
19.0
18.0
IP3
dBm
+32
IP2
dBm
+38
Second Order Harmonic IP
dBm
+40
VSWR Input / Output (max)
1.8:1 / 1.8:1
2.1:1 / 2.1:1
2.3:1 / 2.3:1
DC Current @ 15 Volts (max)
mA
94
98
100
Features
LOW NOISE FIGURE: 3.5 dB (TYP.)
HIGH THIRD ORDER IP: +32 dBm (TYP.)
HIGH OUTPUT LEVEL: +21 dBm (TYP.)
LOW VSWR: 1.8:1 (TYP.)
Description
The A32 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance
and high reliability.
This single stage GaAs FET feedback amplifier design displays
impressive performance characteristics over a broadband
frequency range. An RF choke is used for DC power supply
decoupling.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available
.
Product Image
Ordering Information
Part Number
Package
A32
TO-8
SMA32
Surface Mount
CA32
SMA Connectorized
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62C to +125C
Case Temperature
+125C
DC Voltage
+17 V
Continuous Input Power
13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 sec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125C
Thermal Data: VCC = +15 VDC
Parameter
Rating
Thermal Resistance θjc
182C/W
Transistor Power Dissipation Pd
0.288 W
Junction Temperature Rise
Above Case Tjc
+52C
* Over temperature performance limits for part number CA32, guaranteed from 0
oC to +50oC only.
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