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參數資料
| 型號： | A3423LLTR-T |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, -5.5-5.5mT, 500mV, RECTANGULAR, SURFACE MOUNT |
| 封裝： | LEAD FREE, PLASTIC, SOIC-8 |
| 文件頁數： | 7/9頁 |
| 文件大小： | 258K |
| 代理商： | A3423LLTR-T |
Dual Channel Hall Effect Direction Detection Sensor IC
A3423
7
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Application Information
Operation with Fine-Pitch Ring Magnets
. For targets with a cir-
cular pitch of less than 4 mm, a performance improvement can be
observed by rotating the front face of the device (see below). This
rotation decreases the effective Hall element-to-element spacing,
provided that the Hall elements are not rotated beyond the width
of the target.
Applications
. It is strongly recommended that an external
0.01 μF bypass capacitor be connected (in close proximity to the
device) between the supply and ground of the device to
reduce both external noise and noise generated by the internal
logic.
The simplest form of magnet that will operate these devices is a
ring magnet. Other methods of operation, such as linear magnets,
are possible. Extensive applications information on magnets and
Hall-effect sensor ICs is also available in the “Hall-Effect IC
Applications Guide” which can be found in the latest issue of
Application Note 27701, at www.allegromicro.com/techpub2/an/
an27701.pdf.
E1
E2
E1
D
E2
D cos
Target Face Width, F
F < D sin
Target Circular Pitch, P
Normal Coplanar Alignment
Rotated Alignment
Target Profile of Rotation
NS
S
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