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參數(shù)資料
型號(hào): AA026P1-00
廠商: Alpha Industries, Inc.
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:35; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述: 25-29 GHz的砷化鎵單片驅(qū)動(dòng)放大器
文件頁數(shù): 1/2頁
文件大小: 98K
代理商: AA026P1-00
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
25–29 GHz GaAs MMIC
Driver Amplifier
Features
I
Single Bias Supply Operation (6 V)
I
17 dB Typical Small Signal Gain
I
16 dBm Typical P
1 dB
Output Power
at 26.5 GHz
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA026P1-00
Description
Alpha’s three-stage reactively-matched 25–29 GHz
GaAs MMIC driver amplifier has typical small signal gain
of 17 dB with a typical P
1 dB
of 16 dBm at 26.5 GHz.
The chip uses Alpha’s proven 0.25
μ
m MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for gain, output power and S-parameters
prior to shipment for guaranteed performance.
Parameter
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
Θ
JC
Min.
Typ.
2
120
17
-8
-10
16
17
132
Max.
170
Unit
mA
dB
dB
dB
dBm
dBm
°C/W
Drain Current
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Thermal Resistance
1
F = 25–29 GHz
F = 25–29 GHz
F = 25–29 GHz
F = 26.5 GHz
F = 26.5 GHz
14
-6
-6
14
15
Electrical Specifications at 25°C (V
DS
= 6 V)
0
0.000
0.853
0
1
1
2
2
3
0.112
0.194
1.760
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
16 dBm
175
°
C
Absolute Maximum Ratings
1. Calculated value based on measurement of discrete FET.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
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