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參數資料
| 型號： | AA031P1-00 |
| 廠商： | SKYWORKS SOLUTIONS INC |
| 元件分類： | 放大器 |
| 英文描述： | 28000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE |
| 文件頁數： | 1/3頁 |
| 文件大小： | 83K |
| 代理商： | AA031P1-00 |
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 11/02A
28–32 GHz GaAs MMIC
Driver Amplifier
Features
■ Single Bias Supply Operation (5 V)
■ 19 dB Typical Small Signal Gain
■ 16 dBm Typical P1 dB Output Power
at 28 GHz
■ 0.25 m Ti/Pd/Au Gates
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA031P1-00
Description
Skyworks’ three-stage reactively-matched 28–32 GHz
GaAs MMIC driver amplifier has typical small signal gain
of 19 dB with a typical P1 dB of 16 dBm at 28 GHz. The
chip uses Skyworks’ proven 0.25
m MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for gain, output power and S-parameters prior
to shipment for guaranteed performance. Designed for
28–32 GHz LMDS and digital radio bands.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current
IDS
145
200
mA
Small Signal Gain
F = 28–32 GHz
G
17
19
dB
Input Return Loss
F = 28–32 GHz
RLI
-10
-6
dB
Output Return Loss
F = 28–32 GHz
RLO
-15
-10
dB
Output Power at 1 dB Gain Compression
F = 28 GHz
P1 dB
14
16
dBm
Saturated Output Power
F = 28 GHz
PSAT
15
18
dBm
Two-Tone Output Third-Order Intercept1
F = 28 GHz
OIP3
24
dBm
Thermal Resistance2
ΘJC
101
°C/W
Electrical Specifications at 25°C (VDS = 5 V)
0.000
0.085
2.500
2.415
2.093
0.000
1.365
1.255
0.651
0.663
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
16 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
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