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參數(shù)資料
| 型號(hào)： | AA038P5-00 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | GT 4C 4#4 SKT PLUG |
| 中文描述： | 37-39 GHz的砷化鎵單片功率放大器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 129K |
| 代理商： | AA038P5-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 8/00A
1
37–39 GHz GaAs MMIC
Power Amplifier
Features
I
Single Bias Supply Operation (5.5 V)
I
18 dB Typical Small Signal Gain
I
19 dBm Typical P
1 dB
Output Power
at 39 GHz
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA038P5-00
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC amplifier has a typical P
1 dB
of 19 dBm with 17 dB
associated gain over the band 37–39 GHz.The chip uses
Alpha’s proven 0.25
μ
m MESFET technology, and is
based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate an epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where power and gain are required.
Parameter
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
Min.
Typ.
200
18
-13
-20
19
21
15
51
Max.
370
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal Resistance
1
F = 37–39 GHz
F = 37–39 GHz
F = 37–39 GHz
F = 39 GHz
F = 39 GHz
F = 39 GHz
16
-10
-10
16
19
Electrical Specifications at 25°C (V
DS
= 5.5 V)
1. Calculated value based on measurement of discrete FET.
0.000
0
1.230
1.700
3
2
2
1
0.112
0.470
1.588
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
19 dBm
175
°
C
Absolute Maximum Ratings
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