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參數資料
| 型號： | AB1F3P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 104K |
| 代理商： | AB1F3P |
1998
Document No. D10836EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Current drive available up to 0.7 A
On-chip bias resistor
Low power consumption during drive
AB1 SERIES LISTS
Products
R1 (K
)R2 (K)
AB1A4A
10
AB1L2Q
0.47
4.7
AB1A3M
1.0
AB1F3P
2.2
10
AB1J3P
3.3
10
AB1L3N
4.7
10
AB1A4M
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
0.02
A
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
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