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參數(shù)資料
| 型號： | AD408M326RQB-5 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low voltage operation is more suitable to be used on battery backup, portable electronic |
| 中文描述： | 低電壓操作更適合于備用電池，使用便攜式電子 |
| 文件頁數(shù)： | 3/28頁 |
| 文件大?。?/td> | 211K |
| 代理商： | AD408M326RQB-5 |
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Rev.1
Page 3
Description
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable elec-
tronic application. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).
Features
Single 3.3V(
%) only power supply
High speed t
RAC
acess time: 50/60ns
Low power dissipation
- Active mode : 432/396 mW (Mas)
- Standby mode: 0.54 mW (Mas)
Extended - data - out(EDO) page mode access
I/O level: CMOS level (Vcc = 3.3V)
2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
10
±
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