
–3–
REV. 0
AD7750
ORDE RING GUIDE
T emperature
Range
–40
°
C to +85
°
C
–40
°
C to +85
°
C
Package
Description
Package
Options
Model
AD7750AN
AD7750AR
20-Lead Plastic DIP
20-Lead Wide Body SOIC
N-20
R-20
A Version
–40
8
C to
+85
8
C
Parameter
Units
T est Conditions/Comments
POWER SUPPLY
For Specified Performance, Digital Input @ AGND
or V
DD
5 V – 5%
5 V + 5%
T ypically 3.5 mA
V
DD
4.75
5.25
5.5
V min
V max
mA max
I
DD
NOT ES
1
See plots in T ypical Performance Graphs.
2
External current amplification/drive should be used if higher current source and sink capabilities are required, e.g., bipolar transistor.
All specifications subject to change without notice.
TIMNGCHARACTERISTICS
1, 2
Parameter
A Version
Units
T est Conditions/Comments
t
13
t
2
t
3
t
43
t
5
t
6
275
See T able I
t
2
/2
90
See T able I
CLK IN/4
ms
s
s
ms
s
s
F1 and F2 Pulsewidth (Logic Low)
Output Pulse Period. See T able I to Determine the Output Frequency
T ime Between F1 Falling Edge and F2 Falling Edge
F
OUT
Pulsewidth (Logic High)
F
OUT
Pulse Period. See T able I to Determine the Output Frequency
Minimum T ime Between F1 and F2 Pulse
NOT ES
1
Sample tested during initial release and after any redesign or process change that may affect this parameter.
2
See Figure 18.
3
T he pulsewidths of F1, F2 and F
OUT
are not fixed for higher output frequencies. See the Digital-to-Frequency Converter (DT F) section for an explanation.
Specifications subject to change without notice.
(V
DD
= 5 V, AGND = 0V, DVDD = 0 V, REFIN= REFOUT. All specifications T
MN
to T
MAX
unless otherwse noted.)
ABSOLUT E MAX IMUM RAT INGS*
(T
A
= +25
°
C unless otherwise noted)
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND
V
1+
, V
1–
, V
2+
and V
2–
. . . . . . . . . . . . . . . . . . . . –6 V to +6 V
Reference Input Voltage to AGND . . . . –0.3 V to V
DD
+ 0.3 V
Digital Input Voltage to DGND . . . . . . –0.3 V to V
DD
+ 0.3 V
Digital Output Voltage to DGND . . . . . –0.3 V to V
DD
+ 0.3 V
Operating T emperature Range
Commercial (A Version) . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Storage T emperature Range . . . . . . . . . . . . –65
°
C to +150
°
C
Junction T emperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
°
C
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7750 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNNG
ESD SENSITIVE DEVICE
20-Lead SOIC Package, Power Dissipation . . . . . . . . 450 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . . . . . 74
°
C/W
Lead T emperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
20-Lead Plastic DIP, Power Dissipation . . . . . . . . . . 450 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . . . . 102
°
C/W
Lead T emperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. T his is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.