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參數資料
| 型號： | AD7870AQ |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | ADC |
| 英文描述： | LC2MOS Complete, 12-Bit, 100 kHz, Sampling ADCs |
| 中文描述： | 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, CDIP24 |
| 封裝： | 0.300 INCH, HERMETIC SEALED, CERAMIC, DIP-24 |
| 文件頁數： | 4/20頁 |
| 文件大小： | 331K |
| 代理商： | AD7870AQ |
REV. B
AD7870/AD7875/AD7876
TIMNGCHARACTERISTICS
1, 2
–4–
Limit at T
, T
(J, K, L, A, B, C Versions)
Limit at T
, T
MAX
(S, T Versions)
Parameter
Units
Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
63
t
74
50
0
60
0
70
57
5
50
0
0
100
370
135
20
100
10
100
60
120
200
0
0
0
50
0
75
0
70
70
5
50
0
0
100
370
150
20
100
10
100
60
120
200
0
0
0
ns min
ns min
ns min
ns min
ns max
ns max
ns min
ns max
ns min
ns min
ns min
ns min
ns max
ns min
ns max
ns min
ns max
ns min
ns max
ns min
ns min
ns min
ns min
CONVST
Pulse Width
CS
to
RD
Setup T ime (Mode 1)
RD
Pulse Width
CS
to
RD
Hold T ime (Mode 1)
RD
to
INT
Delay
Data Access T ime after
RD
Bus Relinquish T ime after
RD
t
8
t
9
t
t
10
t
126
t
13
HBEN to
RD
Setup T ime
HBEN to
RD
Hold T ime
SSTRB
to SCLK Falling Edge Setup T ime
SCLK Cycle T ime
SCLK to Valid Data Delay. C
L
= 35 pF
SCLK Rising Edge to
SSTRB
t
14
Bus Relinquish T ime after SCLK
t
15
t
16
t
17
t
18
t
19
t
20
CS
to
RD
Setup T ime (Mode 2)
CS
to
BUSY
Propagation Delay
Data Setup T ime Prior to
BUSY
CS
to
RD
Hold T ime (Mode 2)
HBEN to
CS
Setup T ime
HBEN to
CS
Hold T ime
NOT ES
1
T iming specifications in
bold print
are 100% production tested. All other times are sample tested at +25
°
C to ensure compliance. All input signals are
specified with tr = tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.
2
Serial timing is measured with a 4.7 k
pull-up resistor on SDAT A and
SSTRB
and a 2 k
pull-up on SCLK . T he capacitance on all three outputs is 35 pF.
3
t
6
is measured with the load circuits of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V.
4
t
is defined as the time required for the data lines to change 0.5 V when loaded with the circuits of Figure 2.
5
SCLK mark/space ratio (measured from a voltage level of 1.6 V) is 40/60 to 60/40.
6
SDAT A will drive higher capacitive loads but this will add to t
12
since it increases the external RC time constant (4.7 k
i
C
L
) and hence the time to reach 2.4 V.
Specifications subject to chance without notice.
(V
DD
= +5 V
6
5%, V
SS
= –5 V
6
5%, AGND = DGND = 0 V. See Figures 9, 10, 11 and 12.)
ABSOLUT E MAX IMUM RAT INGS*
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
SS
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –7 V
AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V to V
DD
+0.3 V
V
IN
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –15 V to +15 V
REF OUT to AGND . . . . . . . . . . . . . . . . . . . . . . . . 0 V to V
DD
Digital Inputs to DGND . . . . . . . . . . . . –0.3 V to V
DD
+0.3 V
Digital Outputs to DGND . . . . . . . . . . . –0.3 V to V
DD
+0.3 V
Operating T emperature Range
Commercial (J, K , L Versions – AD7870) . . . 0
°
C to +70
°
C
Commercial (K , L Versions – AD7875) . . . . . 0
°
C to +70
°
C
Industrial (A, B, C Versions – AD7870) . . . .–25
°
C to +85
°
C
Industrial (B, C Versions – AD7875/AD7876)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40
°
C to +85
°
C
Extended (S, T Versions) . . . . . . . . . . . . . .–55
°
C to +125
°
C
Storage T emperature Range . . . . . . . . . . . . .–65
°
C to +150
°
C
Lead T emperature (Soldering, 10 sec) . . . . . . . . . . . . . +300
°
C
Power Dissipation (Any Package) to +75
°
C . . . . . . . . .450 mW
Derates above +75
°
C by . . . . . . . . . . . . . . . . . . . . . 10 mW/
°
C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. T his is a stress rating only; functional
operation of the device at these or any other conditions above those listed in
the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
device reliability.
a. High-Z to V
OH
Figure 1. Load Circuits for Access Time
b. High-Z to V
OL
a. V
OH
to High-Z
b. V
OL
to High-Z
Figure 2. Load Circuits for Output Float Delay
CAUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD7870/AD7875/AD7876 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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