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參數資料
| 型號： | AD8012 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Dual 350 MHz Low Power Amplifier |
| 中文描述： | 雙350 MHz低功率放大器 |
| 文件頁數： | 4/15頁 |
| 文件大小： | 414K |
| 代理商： | AD8012 |
AD8012
–4–
REV. A
ABSOLUTE MAXIMUM RATINGS
1
SupplyVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6V
InternalPowerDissipation
2
SmallOutlinePackage (R) . . . . . . . . . . . . . . . . . . . . . 0.8W
microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . .
±
V
S
DifferentialInputVoltage . . . . . . . . . . . . . . . . . . . . . .
±
2.5V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range RM, R . . . . . . –65
°
C to +125
°
C
Operating Temperature Range (A Grade) . . –40
°
C to +85
°
C
Lead Temperature Range (Soldering10sec) . . . . . . . +300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air at +25
°
C
8-Lead SOIC Package:
θ
JA
= 155
°
C/W
8-Lead microSOIC Package:
θ
JA
= 200
°
C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150
°
C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175
°
C for an extended period can result in de-
vice failure.
The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
AMBIENT TEMPERATURE –
8
C
–50
0
T
J
= +150
8
C
2.0
1.5
1.0
M
8-LEAD SOIC
PACKAGE
–40 –30
0
10
20
30
40
50
60
70
80 90
8-LEAD
microSOIC
0.5
–20 –10
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8012 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Options
Brand
Code
Model
AD8012AR
AD8012AR-REEL
AD8012AR-REEL7
AD8012ARM
AD8012ARM-REEL
AD8012ARM-REEL7
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
8-Lead SOIC
13
”
Tape and Reel
7
”
Tape and Reel
8-Lead microSOIC
13
”
Tape and Reel
7
”
Tape and Reel
SO-8
SO-8
SO-8
RM-08
RM-08
RM-08
H6A
H6A
H6A
相關PDF資料 |
PDF描述 |
|---|---|
| AD8012* | Dual 350 MHz Low Power Amplifier |
| AD8013AR-14 | RECTIFIER SCHOTTKY DUAL 30A 40V 275A-ifsm 0.55V-vf 1mA-ir TO-3P 30/TUBE |
| AD8013AR-14-REEL | RECTIFIER SCHOTTKY DUAL 30A 45V 275A-ifsm 0.55V-vf 1mA-ir TO-3P 30/TUBE |
| AD8013ACHIPS | Single Supply, Low Power, Triple Video Amplifier |
| AD8013AN | Single Supply, Low Power, Triple Video Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AD8012_03 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Dual 350 MHz Low Power Amplifier |
| AD8012AR | 功能描述:IC OPAMP CF DUAL LP 125MA 8SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:50 系列:- 放大器類型:J-FET 電路數:2 輸出類型:- 轉換速率:13 V/µs 增益帶寬積:3MHz -3db帶寬:- 電流 - 輸入偏壓:65pA 電壓 - 輸入偏移:3000µV 電流 - 電源:1.4mA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:-40°C ~ 85°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 |
| AD8012AR | 制造商:Analog Devices 功能描述:AMPLIFIER ((NW)) |
| AD8012AR-EBZ | 功能描述:BOARD EVAL FOR AD8012AR RoHS:是 類別:編程器，開發系統 >> 評估板 - 運算放大器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:1 系列:- |
| AD8012ARM | 功能描述:IC OPAMP CF DUAL LP 125MA 8MSOP RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:50 系列:- 放大器類型:J-FET 電路數:2 輸出類型:- 轉換速率:13 V/µs 增益帶寬積:3MHz -3db帶寬:- 電流 - 輸入偏壓:65pA 電壓 - 輸入偏移:3000µV 電流 - 電源:1.4mA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:-40°C ~ 85°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 |
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