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參數資料
| 型號： | AD8066ARM |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | High Performance, 145 MHz FastFET⑩ Op Amps |
| 中文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封裝： | MO-187AA, MSOP-8 |
| 文件頁數： | 7/28頁 |
| 文件大小： | 364K |
| 代理商： | AD8066ARM |
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AD8065/AD8066
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8065/AD8066
packages is limited by the associated rise in junction
temperature (T
J
) on the die. The plastic encapsulating the die
will locally reach the junction temperature. At approximately
150°C, which is the glass transition temperature, the plastic will
change its properties. Even temporarily exceeding this
temperature limit can change the stresses that the package
exerts on the die, permanently shifting the parametric
performance of the AD8065/AD8066. Exceeding a junction
temperature of 175°C for an extended period of time can result
in changes in the silicon devices, potentially causing failure.
Rev. E | Page 7 of 28
The still-air thermal properties of the package and PCB (θ
JA
),
ambient temperature (
T
A
), and total power dissipated in the
package (
P
D
) determine the junction temperature of the die. The
junction temperature can be calculated as
(
JA
D
A
J
P
T
T
θ
×
+
=
)
The power dissipated in the package (
P
D
) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (
V
S
) times the
quiescent current (
I
S
). Assuming the load (
R
L
) is referenced to
midsupply, then the total drive power is
V
S
/2 ×
I
OUT
, some of
which is dissipated in the package and some in the load (
V
OUT
×
I
OUT
). The difference between the total drive power and the load
power is the drive power dissipated in the package.
(
Total
Power
Quiescent
P
D
+
=
)
Power
Load
Power
Drive
(
)
L
OUT
R
L
OUT
R
S
S
S
D
V
V
V
2
I
V
P
2
×
+
×
=
RMS output voltages should be considered. If
R
L
is referenced to
V
S
, as in single-supply operation, then the total drive power is
V
S
×
I
OUT
.
If the rms signal levels are indeterminate, then consider the
worst case, when
V
OUT
=
V
S
/4 for
R
L
to midsupply.
(
S
S
S
D
R
(
)
)
L
V
I
V
P
2
4
+
×
=
In single-supply operation with
R
L
referenced to
V
S
, worst case
is
V
OUT
=
V
S
/2.
M
0
–60
0.5
1.0
1.5
2.0
20
0
–40
–20
40
60
80
100
AMBIENT TEMPERATURE (°C)
0
MSOP-8
SOIC-8
SOT-23-5
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
Airflow will increase heat dissipation, effectively reducing θ
JA
.
Also, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes will
reduce the θ
JA
. Care must be taken to minimize parasitic
capacitances at the input leads of high speed op amps as
discussed in the Layout, Grounding, and Bypassing
Considerations section.
Figure 3 shows the maximum safe power dissipation in the
package versus the ambient temperature for the SOIC
(125°C/W), SOT-23 (180°C/W), and MSOP (150°C/W)
packages on a JEDEC standard 4-layer board. θ
JA
values are
approximations.
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current for
the AD8065/AD8066 will likely cause catastrophic failure.
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