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參數資料
| 型號： | AD8129ARMZ-REEL |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 模擬信號調理 |
| 英文描述： | Low Cost 270 MHz Differential Receiver Amplifiers |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO8 |
| 封裝： | LEAD FREE, MICRO, SO-8 |
| 文件頁數： | 9/40頁 |
| 文件大小： | 549K |
| 代理商： | AD8129ARMZ-REEL |
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AD8129/AD8130
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Power Dissipation
Input Voltage (Any Input)
Differential Input Voltage (AD8129)
V
S
≥ ±11.5 V
Differential Input Voltage (AD8129)
V
S
< ±11.5 V
Differential Input Voltage (AD8130)
Storage Temperature Range
Lead Temperature (Soldering, 10 sec)
Junction Temperature
Rev. C | Page 9 of 40
Rating
26.4 V
Refer to Figure 4
V
S
0.3 V to +V
S
+ 0.3 V
±0.5 V
±6.2 V
±8.4 V
65°C to +150°C
300°C
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is
specified for the device soldered in a circuit board in still air.
Table 5. Thermal Resistance
Package Type
8-Lead SOIC/4-Layer
8-Lead MSOP/4-Layer
Maximum Power Dissipation
The maximum safe power dissipation in the AD8129/AD8130
packages is limited by the associated rise in junction temp-
erature (T
J
) on the die. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8129/AD8130.
Exceeding a junction temperature of 150°C for an extended
period can result in changes in the silicon devices, potentially
causing failure.
θ
JA
121
142
Unit
°C/W
°C/W
The power dissipated in the package (P
D
) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the
voltage between the supply pins (V
S
) times the quiescent
current (I
S
). The power dissipated due to the load drive
depends upon the particular application. The power due to
load drive is calculated by multiplying the load current by the
associated voltage drop across the device. RMS voltages and
currents must be used in these calculations.
Airflow reduces θ
JA
. In addition, more metal directly in contact
with the package leads from metal traces through holes, ground,
and power planes reduces the θ
JA
.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 8-lead SOIC
(121°C/W) and MSOP (θ
JA
= 142°C/W) packages on a JEDEC
standard 4-layer board. θ
JA
values are approximations.
AMBIENT TEMPERATURE (°C)
M
1.75
1.50
1.00
1.25
0.50
0.25
0.75
0
–40–30 –20–10 0
10 20 30 40 50 60 70 80 90 100 110120
SOIC
MSOP
0
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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