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參數(shù)資料
型號: AD8400AN100
廠商: ANALOG DEVICES INC
元件分類: 數(shù)字電位計
英文描述: 32-Tap. Nonvolatile. Linear-Taper Digital Potentiometers in SOT23
中文描述: 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDIP8
封裝: PLASTIC, DIP-8
文件頁數(shù): 2/20頁
文件大小: 496K
代理商: AD8400AN100
10 k
V
VERSION
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Typ
1
Max
Units
DC CHARACTERISTICS RHEOSTAT MODE Specifications Apply to All VRs
Resistor Differential NL
2
Resistor Nonlinearity
2
Nominal Resistance
3
Resistance Tempco
Wiper Resistance
Nominal Resistance Match
DC CHARACTERISTICS POTENTIOMETER DIVIDER Specifications Apply to All VRs
Resolution
N
Integral Nonlinearity
4
INL
Differential Nonlinearity
4
DNL
DNL
DNL
Voltage Divider Tempco
V
W
/
T
Full-Scale Error
V
WFSE
Zero-Scale Error
V
WZSE
RESISTOR TERMINALS
Voltage Range
5
V
A, B, W
Capacitance
6
Ax, Bx
C
A, B
Capacitance
6
Wx
C
W
Shutdown Current
7
I
A_SD
Shutdown Wiper Resistance
R
W_SD
DIGITAL INPUTS & OUTPUTS
Input Logic High
V
IH
Input Logic Low
V
IL
Input Logic High
V
IH
Input Logic Low
V
IL
Output Logic High
V
OH
Output Logic Low
V
OL
Input Current
I
IL
Input Capacitance
6
C
IL
POWER SUPPLIES
Power Supply Range
V
DD
Range
Supply Current (CMOS)
I
DD
Supply Current (TTL)
8
I
DD
Power Dissipation (CMOS)
9
P
DISS
Power Supply Sensitivity
PSS
PSS
DYNAMIC CHARACTERISTICS
6, 10
Bandwidth –3 dB
BW_10K
Total Harmonic Distortion
THD
W
V
W
Settling Time
t
S
Resistor Noise Voltage
e
NWB
Crosstalk
11
C
T
NOTES FOR 10 k
VERSION
Typicals represent average readings at +25
°
C and V
= +5 V.
2
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. See Figure 30 test circuit.
I
W
= 50
μ
A for V
= +3 V and I
= 400
μ
A for V
DD
= +5 V for the 10 k
versions.
3
V
= V
, Wiper (V
) = No Connect.
4
INL and DNL are measured at V
with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. V
A
= V
DD
and V
B
= 0 V.
DNL Specification limits of
±
1 LSB maximum are Guaranteed Monotonic operating conditions. See Figure 29 test circuit.
5
Resistor terminals A, B, W have no limitations on polarity with respect to each other.
6
Guaranteed by design and not subject to production test. Resistor-terminal capacitance tests are measured with 2.5 V bias on the measured terminal. The remaining
resistor terminals are left open circuit.
7
Measured at the Ax terminals. All Ax terminals are open circuited in shutdown mode.
8
Worst case supply current consumed when input logic level at 2.4 V, standard characteristic of CMOS logic. See Figure 21 for a plot of I
DD
versus logic voltage.
9
P
is calculated from (I
×
V
DD
). CMOS logic level inputs result in minimum power dissipation.
10
All Dynamic Characteristics use V
= +5 V.
11
Measured at a V
W
pin where an adjacent V
W
pin is making a full-scale voltage change.
Specifications subject to change without notice.
R-DNL
R-INL
R
R
AB
/
T
R
W
R/R
O
R
WB
, V
A
= NC
R
WB
, V
A
= NC
T
A
= +25
°
C, Model: AD840XYY10
V
AB
= V
DD
, Wiper = No Connect
I
W
= 1 V/R
CH 1 to 2, 3, or 4,
V
AB
= V
DD
, T
A
= +25
°
C
–1
–2
8
±
1/4
±
1/2
10
500
50
0.2
+1
+2
12
LSB
LSB
k
ppm/
°
C
%
100
1
8
–2
–1
–1
–1.5
Bits
LSB
LSB
LSB
LSB
ppm/
°
C
LSB
LSB
±
1/2
±
1/4
±
1/4
±
1/2
15
–2.8
+1.3
+2
+1
+1
+1.5
V
DD
= +5 V
V
DD
= +3 V T
A
= +25
°
C
V
DD
= +3 V T
A
= –40
°
C, +85
°
C
Code = 80
H
Code = FF
H
Code = 00
H
–4
0
0
+2
0
V
DD
V
pF
pF
μ
A
f = 1 MHz, Measured to GND, Code = 80
H
f = 1 MHz, Measured to GND, Code = 80
H
V
A
= V
DD
, V
B
= 0 V,
SHDN
= 0
V
A
= V
DD
, V
B
= 0 V,
SHDN
= 0, V
DD
= +5 V
75
120
0.01
100
5
200
V
DD
= +5 V
V
DD
= +5 V
V
DD
= +3 V
V
DD
= +3 V
R
L
= 1 k
to V
DD
I
OL
= 1.6 mA, V
DD
= +5 V
V
IN
= 0 V or +5 V, V
DD
= +5 V
2.4
V
V
V
V
V
V
μ
A
pF
0.8
2.1
0.6
V
DD
–0.1
0.4
±
1
5
2.7
5.5
5
4
27.5
V
μ
A
mA
μ
W
%/%
%/%
V
IH
= V
DD
or V
IL
= 0 V
V
IH
= 2.4 V or 0.8 V, V
DD
= +5.5 V
V
IH
= V
DD
or V
IL
= 0 V, V
DD
= +5.5 V
V
DD
= +5 V
±
10%
V
DD
= +3 V
±
10%
0.01
0.9
0.0002 0.001
0.006
0.03
R = 10 k
V
A
= 1 V rms + 2 V dc, V
B
= 2 V dc, f = 1 kHz
V
A
= V
DD
, V
B
= 0 V,
±
1% Error Band
R
WB
= 5 k
, f = 1 kHz,
RS
= 0
V
A
= V
DD
, V
B
= 0 V
600
0.003
2
9
–65
kHz
%
μ
s
nV/
Hz
dB
AD8400/AD8402/AD8403–SPECIFICATIONS
(V
DD
= +3 V
6
10% or + 5 V
6
10%, V
A
= +V
DD
, V
B
= 0 V, –40
8
C
T
A
+85
8
C unless
otherwise noted)
REV. B
–2–
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AD8400AN50 制造商:Rochester Electronics LLC 功能描述:
AD8400AR1 功能描述:IC DGTL POT 8BIT 1K 1CH 8-SOIC RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:XDCP™ 接片:256 電阻(歐姆):100k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 ±300 ppm/°C 存儲器類型:非易失 接口:I²C(設(shè)備位址) 電源電壓:2.7 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP(0.173",4.40mm 寬) 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR)
AD8400AR10 功能描述:IC DGTL POT 8BIT 10K 1CH 8-SOIC RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:DPP 接片:32 電阻(歐姆):10k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 300 ppm/°C 存儲器類型:非易失 接口:3 線串行(芯片選擇,遞增,增/減) 電源電壓:2.5 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN(2x3) 包裝:帶卷 (TR)
AD8400AR100 功能描述:IC DGTL POT 8BIT 100K 1CH 8-SOIC RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:XDCP™ 接片:256 電阻(歐姆):100k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 ±300 ppm/°C 存儲器類型:非易失 接口:I²C(設(shè)備位址) 電源電壓:2.7 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP(0.173",4.40mm 寬) 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR)
AD8400AR100-REEL 功能描述:IC POT DIG SGLE 100K 8BIT 8SOIC RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:DPP 接片:32 電阻(歐姆):10k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 300 ppm/°C 存儲器類型:非易失 接口:3 線串行(芯片選擇,遞增,增/減) 電源電壓:2.5 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN(2x3) 包裝:帶卷 (TR)
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