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參數資料
| 型號： | AD8512AR-REEL7 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 運動控制電子 |
| 英文描述： | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| 中文描述： | DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁數： | 17/20頁 |
| 文件大小： | 497K |
| 代理商： | AD8512AR-REEL7 |
AD8510/AD8512/AD8513
I-V CONVERSION APPLICATIONS
Photodiode Circuits
Common applications for I-V conversion include photodiode
circuits, where the amplifier is used to convert a current emitted
by a diode placed at the positive input terminal into an output
voltage.
Rev. E | Page 17 of 20
The AD8510/AD8512/AD8513’s low input bias current, wide
bandwidth, and low noise make them each an excellent choice
for various photodiode applications, including fax machines,
fiber optic controls, motion sensors, and bar code readers.
The circuit shown in Figure 53 uses a silicon diode with zero
bias voltage. This is known as a Photovoltaic Mode; this
configuration limits the overall noise and is suitable for
instrumentation applications.
4
7
3
6
2
AD8510
Cf
R2
Rd
Ct
V
EE
V
CC
0
Figure 53. Equivalent Preamplifier Photodiode Circuit
A larger signal bandwidth can be attained at the expense of
additional output noise. The total input capacitance (Ct)
consists of the sum of the diode capacitance (typically 3 pF to
4 pF) and the amplifier’s input capacitance (12 pF), which
includes external parasitic capacitance. Ct creates a pole in the
frequency response, which may lead to an unstable system. To
ensure stability and optimize the bandwidth of the signal, a
capacitor is placed in the feedback loop of the circuit shown in
Figure 53. It creates a zero and yields a bandwidth whose corner
frequency is 1/(2π(R2Cf)).
The value of
R
2 can be determined by the ratio V/I
D
, where V is
the desired output voltage of the op amp and I
D
is the diode
current. For example, if I
D
is 100 μA and a 10 V output voltage is
desired, R2 should be 100 k. Rd is a junction resistance that
drops typically by a factor of 2 for every 10°C increase in
temperature. A typical value for Rd is 1000 M. Since Rd >> R2,
the circuit behavior is not impacted by the effect of the junction
resistance. The maximum signal bandwidth is
Ct
2
R
ft
f
MAX
2
π
=
where f
t
is the unity gain frequency of the amplifier.
Using the parameters above,
Cf
≈ 1 pF, which yields a signal
bandwidth of about 2.6 MHz.
ft
R
Ct
Cf
2
2
π
=
where
ft
is the unity gain frequency of the op amp, achieves a
phase margin, Φ
m
, of approximately 45°.
A higher phase margin can be obtained by increasing the value
of
Cf
. Setting
Cf
to twice the previous value yields approximately
Φ
m
= 65° and a maximally flat frequency response, but reduces
the maximum signal bandwidth by 50%.
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相關代理商/技術參數 |
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| AD8512ARZ | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 產品培訓模塊:Differential Circuit Design Techniques for Communication Applications 標準包裝:1 系列:- 放大器類型:RF/IF 差分 電路數:1 輸出類型:差分 轉換速率:9800 V/µs 增益帶寬積:- -3db帶寬:2.9GHz 電流 - 輸入偏壓:3µA 電壓 - 輸入偏移:- 電流 - 電源:40mA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-VQFN 裸露焊盤，CSP 供應商設備封裝:16-LFCSP-VQ 包裝:剪切帶 (CT) 產品目錄頁面:551 (CN2011-ZH PDF) 其它名稱:ADL5561ACPZ-R7CT |
| AD8512ARZ-REEL | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:1,000 系列:- 放大器類型:電壓反饋 電路數:4 輸出類型:滿擺幅 轉換速率:33 V/µs 增益帶寬積:20MHz -3db帶寬:30MHz 電流 - 輸入偏壓:2nA 電壓 - 輸入偏移:3000µV 電流 - 電源:2.5mA 電流 - 輸出 / 通道:30mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:14-SOIC 包裝:帶卷 (TR) |
| AD8512ARZ-REEL7 | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:1,000 系列:- 放大器類型:電壓反饋 電路數:4 輸出類型:滿擺幅 轉換速率:33 V/µs 增益帶寬積:20MHz -3db帶寬:30MHz 電流 - 輸入偏壓:2nA 電壓 - 輸入偏移:3000µV 電流 - 電源:2.5mA 電流 - 輸出 / 通道:30mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:14-SOIC 包裝:帶卷 (TR) |
| AD8512BR | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:2,500 系列:Excalibur™ 放大器類型:J-FET 電路數:1 輸出類型:- 轉換速率:45 V/µs 增益帶寬積:10MHz -3db帶寬:- 電流 - 輸入偏壓:20pA 電壓 - 輸入偏移:490µV 電流 - 電源:1.7mA 電流 - 輸出 / 通道:48mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| AD8512BR-REEL | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:150 系列:- 放大器類型:音頻 電路數:2 輸出類型:- 轉換速率:5 V/µs 增益帶寬積:12MHz -3db帶寬:- 電流 - 輸入偏壓:100nA 電壓 - 輸入偏移:500µV 電流 - 電源:6mA 電流 - 輸出 / 通道:50mA 電壓 - 電源，單路/雙路(±):4 V ~ 32 V，±2 V ~ 16 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應商設備封裝:8-TSSOP 包裝:管件 |
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