- 您現在的位置：買賣IC網 > PDF目錄373980 > ADE7169ACPZF16-RL (ANALOG DEVICES INC) Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver PDF資料下載
參數資料
| 型號： | ADE7169ACPZF16-RL |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 模擬信號調理 |
| 英文描述： | Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, QCC64 |
| 封裝： | 9 X 9 MM, ROHS COMPLIANT, MO-22-VMMD-4, LFCSP-64 |
| 文件頁數： | 96/140頁 |
| 文件大小： | 1359K |
| 代理商： | ADE7169ACPZF16-RL |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁當前第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁
ADE7169F16
Preliminary Technical Data
FLASH MEMORY
FLASH MEMORY OVERVIEW
Flash memory is a type of non-volatile memory that is in-
circuit programmable. The default, erased, state of a byte of
flash memory is 0xFF. When a byte of flash memory is
programmed, the required bits change from one to zero. The
flash memory must be erased to turn the zeros back to ones.
However, a byte of flash memory cannot be erased individually.
The entire segment, or page, of flash memory that contains the
byte must be erased.
Rev. PrD | Page 96 of 140
The ADE7169F16 provides 16kbytes of flash
program/information memory. This memory is segmented into
32 pages of 512 bytes each. So, to reprogram one byte of flash
memory, the 511 bytes in that page must be erased. The flash
memory can be erased by page or all at once in a mass erase.
There is a command to verify that a flash write operation has
completed successfully. The ADE7169F16 flash memory
controller also offers configurable flash memory protection.
The 16 kbytes of flash memory are provided on-chip to facilitate
code execution without any external discrete ROM device
requirements. The program memory can be programmed in-
circuit, using the serial download mode provided or using
conventional third party memory programmers.
Flash/EE Memory Reliability
The Flash memory arrays on the ADE7169F16 are fully
qualified for two key Flash/EE memory characteristics:
Flash/EE memory cycling endurance and Flash/EE memory
data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four
independent, sequential events:
1.
Initial page erase sequence
2.
Read/verify sequence
3.
Byte program sequence
4.
Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded, signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the specification table, the ADE7169F16 flash
memory endurance qualification has been carried out in
accordance with JEDEC Specification A117 over the industrial
temperature range of –40°C, +25°C and +85°C. The results
allow the specification of a minimum endurance figure over
supply and temperature of 100,000 cycles, with a minimum
endurance figure of 20,000 cycles of operation at 25°C.
Retention is the ability of the Flash memory to retain its
programmed data over time. Again, the parts have been qualified
in accordance with the formal JEDEC Retention Lifetime
Specification (A117) at a specific junction temperature (T
J
=
55°C). As part of this qualification procedure, the Flash
memory is cycled to its specified endurance limit described
previously, before data retention is characterized. This means
that the Flash memory is guaranteed to retain its data for its full
specified retention lifetime every time the Flash memory is
reprogrammed. It should also be noted that retention lifetime,
based on an activation energy of 0.6 eV, derates with T
J
as shown
in Figure 65.
40
60
70
90
T
J
JUNCTION TEMPERATURE (
°
C)
R
250
200
150
100
50
0
50
80
110
300
100
ADI SPECIFICATION
100 YEARS MIN.
AT T
J
= 55
°
C
0
Figure 65. Flash/EE Memory Data Retention
FLASH MEMORY ORGANIZATION
The 16kbytes of flash memory provided by the ADE7169F16
are segmented into 32 pages of 512 bytes each. It is up to the
user to decide which Flash memory he would like to allocate for
data memory. It is recommended that each page be dedicated
solely to program or data memory so that an instance does not
arise where the program counter is loaded with data memory
instead of an opcode from the program memory or where
program memory is erased to update a byte of data memory.
相關PDF資料 |
PDF描述 |
|---|---|
| ADE7169ASTF16 | Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| ADE7169ASTF16-RL | Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| ADE7169ASTZF16 | Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| ADE7169ASTZF16-RL | Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| ADE7169F16 | Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ADE7169ACPZF16-RL1 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| ADE7169ASTF16 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| ADE7169ASTF16-RL | 制造商:AD 制造商全稱:Analog Devices 功能描述:Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver |
| ADE7169ASTZF16 | 功能描述:IC ENERGY METER 1PHASE 64LQFP RoHS:是 類別:集成電路 (IC) >> PMIC - 能量測量 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:* |
| ADE7169ASTZF16-RL | 功能描述:IC ENERGY METER 1PHASE 64LQFP RoHS:是 類別:集成電路 (IC) >> PMIC - 能量測量 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:* |
發布緊急采購，3分鐘左右您將得到回復。