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參數資料
| 型號： | ADF4360-8 |
| 廠商： | Analog Devices, Inc. |
| 元件分類： | XO, clock |
| 英文描述： | Integrated Synthesizer and VCO |
| 中文描述： | 綜合合成器和VCO |
| 文件頁數： | 6/24頁 |
| 文件大小： | 539K |
| 代理商： | ADF4360-8 |
ADF4360-5
ABSOLUTE MAXIMUM RATINGS
Table 3. T
A
= 25°C, unless otherwise noted
Parameter
AV
DD
to GND*
AV
DD
to DV
DD
V
VCO
to GND
V
VCO
to AV
DD
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
IN
to GND
Operating Temperature Range
Maximum Junction Temperature
CSP θ
JA
Thermal Impedance
(Paddle Soldered)
(Paddle Not Soldered)
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
*GND = AGND = DGND = 0 V.
Rev. 0 | Page 6 of 24
Rating
0.3 V to +3.9 V
0.3 V to +0.3 V
0.3 V to +3.9 V
0.3 V to +0.3 V
0.3 V to V
DD
+ 0.3 V
0.3 V to V
DD
+ 0.3 V
0.3 V to V
DD
+ 0.3 V
150°C
50°C/W
88°C/W
215°C
220°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect device
reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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