- 您現在的位置：買賣IC網 > PDF目錄373987 > ADG465BRT (ANALOG DEVICES INC) Single Channel Protector in an SOT-23 Package PDF資料下載
參數資料
| 型號： | ADG465BRT |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single Channel Protector in an SOT-23 Package |
| 中文描述： | 20 mA, 3 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, RT-6, 6 PIN |
| 文件頁數： | 6/8頁 |
| 文件大小： | 108K |
| 代理商： | ADG465BRT |
ADG465
–6–
REV. A
When a negative overvoltage is applied to the channel protector
circuit, the PMOS transistor enters a saturated mode of operation
as the drain voltage exceeds V
SS
– V
TP
. See Figure 9 below. As in
the case of the positive overvoltage, the other MOS devices are
nonsaturated.
NEGATIVE
OVERVOLTAGE
(–20V)
NMOS
NMOS
V
SS
(–15V)
V
DD
(+15V)
V
DD
(+15V)
V
SS
– V
TP
*
(–13V)
PMOS
NEGATIVE
OVERVOLTAGE
(–20V)
SATURATED
NON-
SATURATED
NON-
SATURATED
*V
TP
= PMOS THRESHOLD VOLTAGE (+2V)
Figure 9. Negative Overvoltage on the Channel Protector
The channel protector is also functional when the supply rails
are down (e.g., power failure) or momentarily unconnected
(e.g., rack system). This is where the channel protector has an
advantage over more conventional protection methods such as
diode clamping (see Applications Information). When V
DD
and
V
SS
equal 0V, all transistors are off and the current is limited to
microampere levels (see Figure 10).
V
SS
(0V)
V
DD
(0V)
V
DD
(0V)
(0V)
POSITIVE OR
NEGATIVE
OVERVOLTAGE
OFF
OFF
OFF
NMOS
NMOS
PMOS
Figure 10. Channel Protector Supplies Equal to Zero Volts
TRENCH ISOLATION
The MOS devices that make up the channel protector are
isolated from each other by an oxide layer (trench) (see Figure
11). When the NMOS and PMOS devices are not electrically
isolated from each other, there exists the possibility of “latchup”
caused by parasitic junctions between CMOS transistors. Latchup
is caused when P-N junctions that are normally reverse biased,
become forward biased, causing large currents to flow. This can
be destructive.
CMOS devices are normally isolated from each other by
Junction Isolation
. In Junction Isolation, the
N
and
P
wells of the
CMOS transistors form a diode that is reverse biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward biased. A Silicon-Controlled Rectifier
(SCR) type circuit is formed by the two transistors, causing a
significant amplification of the current that, in turn, leads to
latchup. With Trench Isolation, this diode is removed; the result
is a latchup-proof circuit.
V
G
V
D
P
+
T
R
E
N
C
H
T
R
E
N
C
H
V
G
V
D
N
+
T
R
E
N
C
H
P-CHANNEL
N-CHANNEL
N
–
P
–
BURIED OXIDE LAYER
SUBSTRATE (BACKGATE)
N
+
V
S
V
S
P
+
Figure 11. Trench Isolation
相關PDF資料 |
PDF描述 |
|---|---|
| ADG466BR | Triple and Octal Channel Protectors |
| ADG466BRM | Triple and Octal Channel Protectors |
| ADG467 | Triple and Octal Channel Protectors |
| ADG467BR | Triple and Octal Channel Protectors |
| ADG467BRS | Triple and Octal Channel Protectors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ADG465BRT-REEL | 功能描述:IC 1CH PROTECTOR SOT23-6 RoHS:否 類別:過電壓，電流，溫度裝置 >> TVS - 其它復合 系列:ADG465 標準包裝:1 系列:- 電壓 - 工作:120V 電壓 - 箝位:- 技術:混合技術 功率（瓦特）:- 電路數:1 應用:通用 封裝/外殼:模塊 供應商設備封裝:- 包裝:散裝 其它名稱:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST |
| ADG465BRT-REEL7 | 功能描述:IC 1CH PROTECTOR SOT23-6 RoHS:否 類別:過電壓，電流，溫度裝置 >> TVS - 其它復合 系列:ADG465 標準包裝:1 系列:- 電壓 - 工作:120V 電壓 - 箝位:- 技術:混合技術 功率（瓦特）:- 電路數:1 應用:通用 封裝/外殼:模塊 供應商設備封裝:- 包裝:散裝 其它名稱:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST |
| ADG465BRTZ-REEL7 | 功能描述:IC CHANNEL PROTECTOR SGL SOT23-6 RoHS:是 類別:過電壓，電流，溫度裝置 >> TVS - 其它復合 系列:ADG465 標準包裝:1 系列:- 電壓 - 工作:120V 電壓 - 箝位:- 技術:混合技術 功率（瓦特）:- 電路數:1 應用:通用 封裝/外殼:模塊 供應商設備封裝:- 包裝:散裝 其它名稱:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST |
| ADG465BRTZ-REEL7 | 制造商:Analog Devices 功能描述:SINGLE CHANNEL PROTECTOR, SOT-23-6 |
| ADG466 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Triple and Octal Channel Protectors |
發布緊急采購，3分鐘左右您將得到回復。