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參數資料
| 型號： | ADG739 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | CMOS , Low Voltage, Serially Controlled Matrix Switches(CMOS,低電壓,串行控制四通道矩陣開關) |
| 中文描述： | 的CMOS，低電壓，串行控制矩陣開關（的CMOS，低電壓，串行控制四通道矩陣開關） |
| 文件頁數： | 6/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | ADG739 |
–6–
REV. PrC
Prelimnary Technical Data
PRELMNARY
DATA
TECHNCAL
ADG738/ADG739
R
ON
R
FLAT (ON)
Ohmic resistance between D and S.
Flatness is defined as the difference between
the maximum and minimum value of on-
resistance as measured over the specified
analog signal range.
Source leakage current with the switch
“ OF F .”
Drain leakage current with the switch
“ OF F .”
Channel leakage current with the switch
“ ON .”
Analog voltage on terminals D, S.
“OFF” switch source capacitance. Measured
with reference to ground.
“OFF” switch drain capacitance. Measured
with reference to ground.
“ON” switch capacitance. Measured
with reference to ground.
Digital input capacitance.
Delay between applying the digital control
input and the output switching on. See test
circuit 4.
I
S
(OFF)
I
D
(OFF)
I
D
, I
S
(ON)
V
D
(V
S
)
C
S
(OFF)
C
D
(OFF)
C
D
,C
S
(ON)
C
IN
t
ON
T E R M INO L O G Y
t
OFF
Delay between applying the digital control
input and the output switching off.
Off Isolation A measure of unwanted signal coupling
through an “OFF” switch.
C rosstalk
A measure of unwanted signal which is
coupled through from one channel to
another as a result of parasitic capacitance.
C harge
A measure of the glitch impulse transferred
Injection
from the digital input to the analog output
during switching.
attenuated by -3dBs.
On Response T he Frequency response of the “ON”
switch.
On L oss
T he voltage drop across the “ON” switch
seen on the On Response vs. Frequency plot
as how many dBs the signal is away from
0dB.
V
INL
Maximum input voltage for logic “0”.
V
INH
Minimum input voltage for logic “1”.
INL
INH
I
DD
Positive supply current.
A BSOL UT E MA X IMUM R A T INGS
1
(T
A
= +25°C unless otherwise noted)
V
DD
to GND
Analog, Digital Inputs
2
–0.3 V to +7 V
-0.3V to V
DD
+0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D
100mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, each S
Continuous Current D, ADG729
Continuous Current D, ADG728
Operating T emperature Range
Industrial (B Version)
Storage T emperature Range
Junction T emperature
30mA
80mA
120mA
–40°C to +85°C
–65°C to +150°C
+150°C
T SSOP Package, Power Dissipation
θ
JA
T hermal Impedance
θ
JC
T hermal Impedance
L ead T emperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
E SD
mW
150.4°C /W
27.6°C /W
+215°C
+220°C
2kV
NOT ES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. T his is a stress rating only and functional operation of the device
at these or any other conditions above those listed in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Only one absolute maximum rating may
be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited
to the maximum ratings given.
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG738/ADG739 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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