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參數資料
| 型號： | ADM1032ARZ-REEL |
| 廠商： | ON Semiconductor |
| 文件頁數： | 7/18頁 |
| 文件大小： | 197K |
| 描述： | IC TEMP MONITOR 85DEG 8SOIC |
| 產品變化通告： | MFG CHG Notification ADI to ON Semi |
| 標準包裝： | 2,500 |
| 功能： | 溫度監控系統（傳感器） |
| 傳感器類型： | 內部和外部 |
| 感應溫度： | 0°C ~ 120°C |
| 精確度： | ±3°C |
| 拓撲： | ADC，比較器，多路復用器，寄存器庫 |
| 輸出類型： | 2 線 SMBus? |
| 輸出警報： | 是 |
| 輸出風扇： | 是 |
| 電源電壓： | 3 V ~ 5.5 V |
| 工作溫度： | 0°C ~ 120°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝： | 8-SOICN |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | ADM1032ARZ-REEL-ND ADM1032ARZ-REELOSTR |
ADM1032
http://onsemi.com
7
Functional Description
The ADM1032 is a local and remote temperature sensor
and overtemperature alarm. When the ADM1032 is
operating normally, the on-board A/D converter operates in
a free running mode. The analog input multiplexer
alternately selects either the on-chip temperature sensor to
measure its local temperature or the remote temperature
sensor. These signals are digitized by the ADC, and the
results are stored in the local and remote temperature value
registers.
The measurement results are compared with local and
remote, high, low, and THERM
temperature limits stored in
nine on-chip registers. Out-of-limit comparisons generate
flags that are stored in the status register, and one or more
out-of-limit results cause the ALERT
output to pull low.
Exceeding THERM
temperature limits causes the THERM
output to assert low.
The limit registers can be programmed, and the device
controlled and configured, via the serial SMBus. The
contents of any register can also be read back via the SMBus.
Control and configuration functions consist of:
" Switching the Device between Normal Operation and
Standby Mode
" Masking or Enabling the ALERT
Output
" Selecting the Conversion Rate
Measurement Method
A simple method of measuring temperature is to exploit
the negative temperature coefficient of a diode, or the
base-emitter voltage of a transistor, operated at constant
current. Unfortunately, this technique requires calibration to
null out the effect of the absolute value of V
BE
, which varies
from device to device.
The technique used in the ADM1032 is to measure the
change in V
BE
when the device is operated at two different
currents.
This is given by:
(eq. 1)
DV
BE
+
n
f
KT
q
In
(
N
)
where:
K is Boltzmanns constant (1.38 ?/SPAN> 10
23
)
q is the charge on the electron (1.6 ?/SPAN> 10
19
Coulombs)
T is the absolute temperature in Kelvins
N is the ratio of the two currents
n
f
is the ideality factor of the thermal diode.
The ADM1032 is trimmed for an ideality factor of 1.008.
Figure 12 shows the input signal conditioning used to
measure the output of an external temperature sensor.
Figure 12 shows the external sensor as a substrate transistor,
provided for temperature monitoring on some
microprocessors, but it could equally well be a discrete
transistor. If a discrete transistor is used, the collector is not
grounded and should be linked to the base. To prevent
ground noise interfering with the measurement, the more
negative terminal of the sensor is not referenced to ground
but is biased above ground by an internal diode at the D
input. If the sensor is operating in a noisy environment, C1
can optionally be added as a noise filter. Its value should be
no more than 1000 pF. See the Layout Considerations
section for more information on C1.
To measure DV
BE
, the sensor is switched between the
operating currents of I and N ?I. The resulting waveform is
passed through a 65 kHz low-pass filter to remove noise, and
then to a chopper-stabilized amplifier that performs the
functions of amplification and rectification of the waveform
to produce a dc voltage proportional to DV
BE
. This voltage
is measured by the ADC to give a temperature output in twos
complement format. To further reduce the effects of noise,
digital filtering is performed by averaging the results of 16
measurement cycles.
Signal conditioning and measurement of the internal
temperature sensor is performed in a similar manner.
Figure 12. Input Signal Conditioning
LOW-PASS FILTER
f
C
= 65 kHz
REMOTE
SENSING
TRANSISTOR
BIAS
DIODE
D+
D
V
DD
I
BIAS
I
N ?I
V
OUT+
V
OUT
To ADC
C1*
* CAPACITOR C1 IS OPTIONAL AND IT SHOULD ONLY BE USED IN VERY NOISY ENVIRONMENTS. C1 = 1000 pF Max.
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