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參數資料
| 型號： | ADM2209E |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | EMI-/EMC-Compliant +-15 kV ESD Protected, Dual RS-232 Port with Standby |
| 中文描述： | EMI-/EMC-Compliant -15千伏ESD保護，雙路RS - 232備用端口 |
| 文件頁數： | 2/12頁 |
| 文件大小： | 142K |
| 代理商： | ADM2209E |
REV. 0
–2–
ADM2209E–SPECIFICATIONS
Parameter
(V
DD
= 10.8 V to 13.2 V, V
STBY
= 3.3 V
6
5% or 5 V
6
10%, C1 = C2 = 0.1
m
F. All
specifications T
MIN
to T
MAX
unless otherwise noted.)
Min
Typ
1
Max
Units
Test Conditions/Comments
OPERATING CONDITIONS
Operating Voltage Range, V
DD
Standby Voltage Range, V
STBY
V
DD
Power Supply Current
2
+10.8 +12 +13.2 V
+3.15
+5.5
5
V
mA
No Load, All Driver Inputs at 0.8 V or 2 V,
All Receiver Inputs at +15 V or –15 V
No Load, All Tx IN at V
STBY
or Open
V
STBY
Supply Current
TRANSMITTER (DRIVER) CMOS INPUTS
Input Pull-Up Current
High Level Input Voltage, V
INH
Low Level Input Voltage, V
INL
TRANSMITTER (DRIVER) EIA-232 OUTPUTS
Output Voltage Swing
Output Short-Circuit Current, I
OS
Output Resistance
100
200
μ
A
10
25
μ
A
V
V
Transmitter Input at GND
2.1
0.4
±
5.0
±
5
300
±
9.0
±
15
±
30
V
mA
All Transmitter Outputs Loaded with 3 k
to GND
V
O
= 0 V, V
IN
= 0.8 V
3
V
DD
= 0 V, V
STBY
= 0 V, V
IN
=
±
2 V
RECEIVER EIA-232 INPUTS
Input Voltage Range
Input Low Threshold, V
TL
Input High Threshold, V
TH
Input Hysteresis
Input Resistance, R
IN
RECEIVER OUTPUTS
4
High Level Output Voltage, V
OH
Low Level Output Voltage, V
OL
Output Leakage Current (Except R5A, R5B)
DRIVER SWITCHING CHARACTERISTICS
5
Maximum Data Rate
–15
0.4
+15
V
V
V
V
k
1.45
1.7
0.25
5
2.4
3
7
V
IN
=
±
15 V
2.4
V
V
μ
A
I
OH
= –40
μ
A
I
OL
= +1.6 mA
V
DD
= 0 V
0.2
0.05
±
5
0.4
460
460
kbps
kbps
R
L
= 3 k
to 7 k
, C
L
= 50 pF to 470 pF
R
L
= 3 k
to 7 k
, C
L
= 50 pF to 1000 pF,
T
A
= 0
°
C to +85
°
C, 5 V
±
10% Only
R
L
= 3 k
to 7 k
, C
L
= 50 pF to 470 pF,
V
STBY
= 5 V
±
5%, V
DD
= 12 V
±
5%
R
L
= 3 k
, C
L
= 1000 pF (Figures 1 and 2)
R
L
= 3 k
, C
L
= 1000 pF (Figures 1 and 2)
R
L
= 3 k
to 7 k
, C
L
= 50 pF to 470 pF
R
L
= 3 k
to 7 k
, C
L
= 50 pF to 1000 pF,
V
STBY
= 5 V
±
10% Only. Measured from +3 V
to –3 V or Vice Versa
920
kbps
Propagation Delay, High to Low, T
PHL
Propagation Delay, Low to High, T
PLH
Transition Region Slew Rate
Transition Region Slew Rate (5 V)
1
1
16
16
μ
s
μ
s
V/
μ
s
V/
μ
s
6
4
RECEIVER SWITCHING CHARACTERISTICS
Maximum Data Rate
920
460
kbps
kbps
μ
s
μ
s
ns
ns
C
L
= 150 pF, V
STBY
= 5 V
±
5% Only
C
L
= 150 pF
C
L
= 150 pF
C
L
= 150 pF
Figures 3 and 4
Propagation Delay, R1–R4
Propagation Delay, R5
Output Rise Time, t
r
Output Fall Time, t
f
ESD AND EMC
ESD Protection (I-O Pins)
0.4
1
30
30
0.75
2
±
15
±
15
±
8
±
2.5
±
2
10
kV
kV
kV
kV
kV
V/m
Human Body Model
IEC1000-4-2 Air Discharge
IEC1000-4-2 Contact Discharge
Human Body Model, MIL-STD-883B
IEC1000-4-4
IEC1000-4-3
ESD Protection
(All Other Pins)
EFT Protection (I-O Pins)
EMI Immunity
NOTES
1
All typicals are given for V
DD
= +12 V, V
STBY
= 5 V, T
A
= +25
°
C.
2
Current into device pins is defined as positive. Current out-of-device pins is defined as negative. All voltages are referred to ground unless otherwise specified. For
current, minimum and maximum values are specified as an absolute value and the sign is used to indicate direction. For voltage logic levels, the more positive value is
designated as maximum. For example, if –6 V is a maximum, the typical value (–6.8 V) is more negative.
3
Only one driver output shorted at a time.
4
If receiver inputs are unconnected, receiver output is a logic high.
5
Refer to typical curves. Driver output slew rate is measured from the +3.0 V to the –3.0 V level on the output waveform. Slew rate is determined by load capacitance.
Specifications subject to change without notice.
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