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參數資料
| 型號： | ADM3311E* |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 15 kV ESD Protected. +2.7 V to +3.6 V Serial Port Transceiver with Green Idle |
| 中文描述： | 15 kV的ESD保護。 2.7 V至3.6 V串口收發綠色閑置 |
| 文件頁數： | 10/12頁 |
| 文件大小： | 180K |
ADM3311E
–10–
REV. A
FAST TRANSIENT BURST TESTING (IEC1000-4-4)
IEC1000-4-4 (previously 801-4) covers electrical fast-transient/
burst (EFT) immunity. Electrical fast transients occur as a
result of arcing contacts in switches and relays. The tests simu-
late the interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well known back EMF effect. In fact, the spark consists of a
burst of sparks as the relay contacts separate. The voltage appear-
ing on the line, therefore, consists of a burst of extremely fast
transient impulses. A similar effect occurs when switching on
fluorescent lights.
The fast transient burst test defined in IEC1000-4-4 simulates
this arcing and its waveform is illustrated in Figure 25. It con-
sists of a burst of 2.5 kHz to 5 kHz transients repeating at
300 ms intervals. It is specified for both power and data lines.
300ms
0.2/0.4ms
t
V
50ns
t
V
5ns
15ms
Figure 25. IEC1000-4-4 Fast Transient Waveform
Table IV.
V Peak (kV)
PSU
V Peak (kV)
I-O
Level
1
2
3
4
0.5
1
2
4
0.25
0.5
1
2
A simplified circuit diagram of the actual EFT generator is
illustrated in Figure 26.
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp is 1 m long and it completely sur-
rounds the cable, providing maximum coupling capacitance
(50 pF to 200 pF typ) between the clamp and the cable. High
energy transients are capacitively coupled onto the signal lines.
Fast rise times (5 ns) as specified by the standard result in very
effective coupling. This test is very severe since high voltages are
coupled onto the signal lines. The repetitive transients can often
cause problems where single pulses don’t. Destructive latch-up
may be induced due to the high energy content of the transients.
Note that this stress is applied while the interface products are
powered up and transmitting data. The EFT test applies hun-
dreds of pulses with higher energy than ESD. Worst case tran-
sient current on an I-O line can be as high as 40 A.
Test results are classified according to the following:
1. Normal performance within specification limits.
2. Temporary degradation or loss of performance, which is self-
recoverable.
3. Temporary degradation or loss of function or performance,
which requires operator intervention or system reset.
4. Degradation or loss of function that is not recoverable due to
damage.
The ADM3311E has been tested under worst case conditions
using unshielded cables and meet Classification 2. Data trans-
mission during the transient condition is corrupted but it may
be resumed immediately following the EFT event without user
intervention.
HIGH
VOLTAGE
SOURCE
R
C
C
C
L
50
OUTPUT
Z
S
R
M
C
D
Figure 26. IEC1000-4-4 Fast Transient Generator
IEC1000-4-3 RADIATED IMMUNITY
IEC1000-4-3 (previously IEC801-3) describes the measurement
method and defines the levels of immunity to radiated electro-
magnetic fields. It was originally intended to simulate the elec-
tromagnetic fields generated by portable radio transceivers or
any other device that generates continuous wave radiated
electromagnetic energy. Its scope has since been broadened to
include spurious EM energy which can be radiated from fluores-
cent lights, thyristor drives, inductive loads, etc.
Testing for immunity involves irradiating the device with an EM
field. There are various methods of achieving this including
use of anechoic chamber, stripline cell, TEM cell, GTEM cell. A
stripline cell consists of two parallel plates with an electric field
developed between them. The device under test is placed within
the cell and exposed to the electric field. There are three severity
levels having field strengths ranging from 1 V to 10 V/m. Results
are classified in a similar fashion to those for IEC1000-4-4.
1. Normal operation.
2. Temporary degradation or loss of function, which is self-
recoverable when the interfering signal is removed.
3. Temporary degradation or loss of function that requires
operator intervention or system reset when the interfering
signal is removed.
4. Degradation or loss of function that is not recoverable due to
damage.
The ADM3311E easily meets Classification 1 at the most strin-
gent (Level 3) requirement. In fact, field strengths up to 30 V/m
showed no performance degradation and error-free data trans-
mission continued even during irradiation.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ADM3311EACP | 制造商:Rochester Electronics LLC 功能描述:15KV ESD +2.7V TO 3.6V S P T I.C. - Bulk 制造商:Analog Devices 功能描述: |
| ADM3311EACP-REEL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Analog Devices 功能描述: |
| ADM3311EACPZ | 功能描述:IC TXRX RS-232 3:5 2.7V 32LFCSP RoHS:是 類別:集成電路 (IC) >> 接口 - 驅動器，接收器，收發器 系列:- 標準包裝:27 系列:- 類型:收發器 驅動器/接收器數:3/3 規程:RS232，RS485 電源電壓:4.75 V ~ 5.25 V 安裝類型:表面貼裝 封裝/外殼:28-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:28-SOIC 包裝:管件 |
| ADM3311EACPZ-REEL | 功能描述:IC TXRX RS-232 3:5 2.7V 32LFCSP RoHS:是 類別:集成電路 (IC) >> 接口 - 驅動器，接收器，收發器 系列:- 標準包裝:121 系列:- 類型:收發器 驅動器/接收器數:1/1 規程:RS422，RS485 電源電壓:3 V ~ 3.6 V 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤 供應商設備封裝:10-DFN（3x3） 包裝:管件 |
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