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參數資料
| 型號： | ADM809-5SL |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC 0 to 70 |
| 中文描述： | 微處理器監控電路 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 96K |
| 代理商： | ADM809-5SL |
–2–
REV. 0
ADM809-5S/L–SPECIFICATIONS
Parameter
Min
Typ Max
Unit
Test Conditions/Comments
V
CC
Operating Voltage Range
1.0
3.3
5.5
V
T
A
= 0
°
C to +150
°
C with 100 k
Pull-Down on Output
(Figure 3)
T
A
= –40
°
C to +150
°
C with 22 k
External Pull-Up
on Output (Figure 6)
V
CC
< 5.5 V, ADM8_L, T
A
= –40
°
C to +85
°
C
V
CC
< 3.6 V, ADM8_S, T
A
= –40
°
C to +85
°
C
V
CC
< 5.5 V, ADM8_L, T
A
= +85
°
C to +150
°
C
V
CC
< 3.6 V, ADM8_S, T
A
= +85
°
C to +150
°
C
1.2
3.3
5.5
V
Supply Current
24
17
60
50
100
100
μ
A
μ
A
μ
A
μ
A
RESET THRESHOLD
Reset Voltage Threshold
ADM809-5L
ADM809-5L
ADM809-5S
ADM809-5S
4.5
4.40
2.85
2.78
4.75
4.86
3.00
3.08
V
V
V
V
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +150
°
C
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +150
°
C
Reset Threshold Temperature Coefficient
V
CC
to Reset Delay
30
20
ppm/
°
C
μ
s
V
CC
= V
TH
to (V
TH
–100 mV)
Reset Active Timeout Period
30
55
80
ms
T
A
= –40
°
C to +150
°
C
RESET
Output Voltage Low
0.3
0.4
0.3
V
V
V
V
CC
= V
TH
min, I
SINK
= 1.2 mA, ADM809-5S
V
CC
= V
TH
min, I
SINK
= 3.2 mA, ADM809-5L
V
CC
>1.0 V, I
SINK
= 50
μ
A, T
A
= 0
°
C to +150
°
C
V
CC
>1.2 V, I
SINK
= 50
μ
A, T
A
= –40
°
C to +150
°
C
RESET
Output Voltage High
0.8 V
CC
V
CC
– 1.5
V
V
V
CC
> V
TH
max, I
SOURCE
= 500
μ
A
V
CC
> V
TH
max, I
SOURCE
= 800
μ
A
JUNCTION TEMPERATURE
–40
+150
°
C
(V
CC
= Full Operating Range, T
A
= T
MIN
to T
MAX
, V
CC
typ = 5 V for L, 3.3 V for S
Models unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS
*
(T
A
= 25
°
C unless otherwise noted)
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
RESET,
RESET
. . . . . . . . . . . . . . . . . . –0.3 V to V
CC
+ 0.5 V
Input Current
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Output Current
RESET,
RESET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Rate of Rise, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V/
μ
s
Power Dissipation, RT-3 SOT-23
Derate by 4 mW/
°
C above 70
°
C . . . . . . . . . . . . . . . 320 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 333
°
C/W
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300
°
C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°
C
Storage Temperature Range . . . . . . . . . . . . . –65
°
C to +150
°
C
*
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum ratings for
extended periods of time may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADM809-5S/L features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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